A line-integral work function for the Lorentz force

The image obtained in a transmission electron microscope is the two-dimensional projection of a three-dimensional (3D) object. The 3D reconstruction of the object can be calculated from a series of projections by back-projection, but this algorithm assumes that the image is linearly related to a line integral of the object function. However, there are two kinds of contrast in electron microscopy, scattering and phase contrast, of which only the latter is linear with the optical density (OD) in the micrograph. Therefore the OD can be used as a measure of the projection only for thin specimens where phase contrast dominates the image. For thick specimens, where scattering contrast predominates, an exponential absorption law holds, and a logarithm of OD must be used. However, for large thicknesses, the simple exponential law might break down due to multiple and inelastic scattering.

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Surface reactions observed by photoemission electron microscopy (PEEM)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100121831 ◽

1992 ◽

Vol 50 (1) ◽

pp. 286-287

Author(s):

H.H. Rotermund

Keyword(s):

Electron Microscopy ◽

Electron Microscope ◽

Work Function ◽

Chemical Reactions ◽

Reaction Diffusion ◽

Dynamic Processes ◽

Clean Surface ◽

Crystal Surfaces ◽

Single Crystal Surfaces ◽

Photoemission Electron

Chemical reactions at a surface will in most cases show a measurable influence on the work function of the clean surface. This change of the work function δφ can be used to image the local distributions of the investigated reaction,.if one of the reacting partners is adsorbed at the surface in form of islands of sufficient size (Δ>0.2μm). These can than be visualized via a photoemission electron microscope (PEEM). Changes of φ as low as 2 meV give already a change in the total intensity of a PEEM picture. To achieve reasonable contrast for an image several 10 meV of δφ are needed. Dynamic processes as surface diffusion of CO or O on single crystal surfaces as well as reaction / diffusion fronts have been observed in real time and space.

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Epitaxial ferroelectric thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170591 ◽

1994 ◽

Vol 52 ◽

pp. 572-573

Author(s):

S. G. Ghonge ◽

E. Goo ◽

R. Ramesh ◽

R. Haakenaasen ◽

D. K. Fork

Keyword(s):

Single Crystal ◽

Work Function ◽

Nonvolatile Memory ◽

Ferroelectric Properties ◽

Electrical Contact ◽

Memory Devices ◽

Ferroelectric Films ◽

Si Substrates ◽

Electro Optic ◽

Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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