Comparative Study of Characteristics and Interface States with and without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO
            2
            Gate Insulator on Si Substrates

Gate Insulator ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Si Substrates ◽

Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Applied Physics Express ◽

10.7567/apex.9.084102 ◽

2016 ◽

Vol 9 (8) ◽

pp. 084102 ◽

Cited By ~ 8

Author(s):

Zhili Zhang ◽

Shuangjiao Qin ◽

Kai Fu ◽

Guohao Yu ◽

Weiyi Li ◽

...

Keyword(s):

Ionic Liquid ◽

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Gate Recess

Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jn02 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN02 ◽

Cited By ~ 2

Author(s):

Shu Yang ◽

Sen Huang ◽

Michael Schnee ◽

Qing-Tai Zhao ◽

Jürgen Schubert ◽

...

Keyword(s):

Ion Implantation ◽

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Enhancement Mode ◽

Atomic layer deposition of ZrO2as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Applied Physics Letters ◽

10.1063/1.4824445 ◽

2013 ◽

Vol 103 (14) ◽

pp. 142109 ◽

Cited By ~ 45

Author(s):

G. Ye ◽

H. Wang ◽

S. Arulkumaran ◽

G. I. Ng ◽

R. Hofstetter ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectrics ◽

Atomic Layer ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Layer Deposition

Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2005.12.115 ◽

2006 ◽

Vol 32 (1-2) ◽

pp. 566-568 ◽

Cited By ~ 5

Author(s):

Kun-Ta Wu ◽

P.H. Chang ◽

S.T. Lien ◽

N.C. Chen ◽

Ching-An Chang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

P Type

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances ◽

10.1063/1.5116356 ◽

2019 ◽

Vol 9 (12) ◽

pp. 125231

Author(s):

Ajay Kumar Visvkarma ◽

Chandan Sharma ◽

Robert Laishram ◽

Sonalee Kapoor ◽

D. S. Rawal ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/6/012 ◽

2006 ◽

Vol 21 (6) ◽

pp. 781-785 ◽

Cited By ~ 7

Author(s):

Dong-Hai Huang ◽

Wei-Chou Hsu ◽

Yu-Shyan Lin ◽

Yue-Huei Wu ◽

Rong-Tay Hsu ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Time-dependent characteristics and physical mechanisms of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under different bias conditions

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab3d52 ◽

2019 ◽

Vol 52 (48) ◽

pp. 485106 ◽

Cited By ~ 2

Author(s):

Shanjie Li ◽

Zhiyuan He ◽

Rui Gao ◽

Yiqiang Chen ◽

Yang Liu ◽

...

Keyword(s):

Electron Mobility ◽

Time Dependent ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Physical Mechanisms ◽

Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.110202 ◽

2011 ◽

Vol 50 ◽

pp. 110202 ◽

Cited By ~ 25

Author(s):

Sen Huang ◽

Shu Yang ◽

John Roberts ◽

Kevin J. Chen

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Voltage Instability ◽

Mechanical tensile strain for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on a silicon-on-insulator substrate

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2019.153178 ◽

2020 ◽

Vol 820 ◽

pp. 153178 ◽

Cited By ~ 1

Author(s):

Hsuan-Ling Kao ◽

Cheng-Lin Cho ◽

Hsien-Chin Chiu ◽

Hou-Yu Wang ◽

Shuang-Hao Chuang ◽

...

Keyword(s):

Electron Mobility ◽

Tensile Strain ◽

Silicon On Insulator ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Mechanical Tensile ◽

Insulator Substrate

Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.020301 ◽

2015 ◽

Vol 54 (2) ◽

pp. 020301 ◽

Cited By ~ 5

Author(s):

Toshiharu Kubo ◽

Joseph J. Freedsman ◽

Yusuke Yoshida ◽

Takashi Egawa

Keyword(s):

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Layer Deposition ◽

Current Voltage ◽

Current Voltage Characteristics