Field-enhanced-generated leakage current of metal-induced laterally crystallized hydrogenated n-type poly-Si TFTs under hot-carrier stress

2009 ◽  
Vol 24 (8) ◽  
pp. 085015 ◽  
Author(s):  
Zhen Zhu ◽  
Zong-Sheng Lai
2004 ◽  
Vol 808 ◽  
Author(s):  
Jae-Hoon Lee ◽  
Moon-Young Shin ◽  
Heesun Shin ◽  
Woo-Jin Nam ◽  
Min-Koo Han

ABSTRACTWe propose a short channel gate overlapped lightly doped drain (GOLDD) poly-Si TFT employing 45° tilt implant for source and drain (S/D) regions without any additional ion doping or mask. Oblique-incident ELA activation is performed to activate both n+ S/D and n- LDD regions as well as cure junction defects. The proposed poly-Si TFT can suppress the anomalous leakage current, and exhibit the better reliability against the hot-carrier stress.


2010 ◽  
Vol 31 (9) ◽  
pp. 1029-1031 ◽  
Author(s):  
Heung-Jae Cho ◽  
Younghwan Son ◽  
Byoung-Chan Oh ◽  
Sanghoon Lee ◽  
Jong-Ho Lee ◽  
...  

2001 ◽  
Vol 48 (12) ◽  
pp. 2746-2753 ◽  
Author(s):  
Ja-Hao Chen ◽  
Shyh-Chyi Wong ◽  
Yeong-Her Wang

1999 ◽  
Vol 46 (9) ◽  
pp. 1877-1882 ◽  
Author(s):  
Tahui Wang ◽  
Lu-Ping Chiang ◽  
Nian-Kai Zous ◽  
Charng-Feng Hsu ◽  
Li-Yuan Huang ◽  
...  

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