The mechanisms of negative oxygen ion formation from Al-doped ZnO target and the improvements in electrical and optical properties of thin films using off-axis dc magnetron sputtering at low temperature

2011 ◽  
Vol 26 (10) ◽  
pp. 105022 ◽  
Author(s):  
Huu Chi Nguyen ◽  
Thanh Thuy Trinh ◽  
Tran Le ◽  
Cao Vinh Tran ◽  
Tuan Tran ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Ion Formation ◽  
Oxygen Ion ◽  
Doped Zno

Structural, Electrical and Optical Properties of Cd Doped ZnO Thin Films by Reactive dc Magnetron Sputtering

JOM ◽  
2015 ◽  
Vol 67 (4) ◽  
pp. 834-839 ◽  
Author(s):  
A. Guru Sampath Kumar ◽  
L. Obulapathi ◽  
T. Sofi Sarmash ◽  
D. Jhansi Rani ◽  
M. Maddaiah ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Doped Zno

Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 362-367
Author(s):  
Feng Lu ◽  
Yu Sun ◽  
Cheng Hai Xu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Polycrystalline Hexagonal Wurtzite Structure ◽  
Doped Zno

The high quality ZAO thin films were successfully produced by DC reaction magnetron sputtering technology. The XRD，electrical and optical properties of films are particular investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure，and Al2O3 crystal phase are not found. At the same time，the high quality ZAO films with the minimum resistivity of 4.5x10-4Ω•㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

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