Electronic and optical properties of core–shell nanowires in a magnetic field

2014 ◽  
Vol 26 (9) ◽  
pp. 095501 ◽  
Author(s):  
V V Ravi Kishore ◽  
B Partoens ◽  
F M Peeters
2020 ◽  
Vol 34 (25) ◽  
pp. 2050214 ◽  
Author(s):  
Chang Liu ◽  
Enling Li ◽  
Tuo Peng ◽  
Kaifei Bai ◽  
Yanpeng Zheng ◽  
...  

In this paper, electronic and optical properties of GaN/InN core/shell nanowires (CSNWs) have been theoretically investigated through the first principles calculations. The binding energy of In and N atoms on surface of six crystal planes along the [Formula: see text]-axis of GaN nanowires are all negative, which indicate that In and N atoms can be effectively deposited on the surface of GaN nanowires and preparing GaN/InN CSNWs is feasible theoretically. Calculation results of electronic properties indicate that the core/shell ratio and diameter of GaN/InN CSNWs have significant effect on the band structure, bandgap can be effectively adjusted when keeping the number of GaN layers unchanged and changing the number of InN layers. Moreover, with the increase in the number of InN layers, the absorption spectrum of GaN/InN CSNW has significant redshift and few weak absorption peaks appear in the visible light region.


2019 ◽  
Vol 486 ◽  
pp. 539-545 ◽  
Author(s):  
Shafiq Ur Rehman ◽  
Muhammad Hafeez ◽  
Waqar Uddin ◽  
Sayed Ali Khan ◽  
Qixiao Lu ◽  
...  

2019 ◽  
Vol 34 (02) ◽  
pp. 2050021 ◽  
Author(s):  
Jiangshan Zheng ◽  
Enling Li ◽  
Jie Yan ◽  
Zhen Cui ◽  
Deming Ma

The electronic and optical properties of GaN/AlN core–shell nanowires (NWs) with different core–shell ratios are studied by means of density functional theory (DFT). The results show that as the GaN core structure increases (the AlN shell remains unchanged), the band gap of NWs decreases. In contrast, with the increase of AlN shell (GaN nucleus remains unchanged), the band gap almost remains unchanged. That is to say the adjustment capability of core–shell ratio for the band gap of GaN/AlN core–shell NWs with the same diameter of GaN core degenerates, and the band gap of which are mainly controlled by GaN core. Ga–N bond and Al–N bond show a strong ionic property because of the electronegativity of N is strong over Ga and Al. In addition, the calculated results of the real part [Formula: see text] and the imaginary parts [Formula: see text] with photon energy indicate that the storage capability and loss of the NWs to electric field energy are different with the content of AlN. The four structured NWs reflect electromagnetic waves as conductor in a high frequency ultraviolet range. The results are valuable for the design of GaN/AlN core–shell NWs optoelectronic nanodevices and the research of other core–shell NWs heterostructures.


2013 ◽  
Vol 102 (6) ◽  
pp. 063101 ◽  
Author(s):  
Jasher John Ibanes ◽  
Ma. Herminia Balgos ◽  
Rafael Jaculbia ◽  
Arnel Salvador ◽  
Armando Somintac ◽  
...  

2018 ◽  
Vol 9 ◽  
pp. 1512-1526 ◽  
Author(s):  
Tudor D Stanescu ◽  
Anna Sitek ◽  
Andrei Manolescu

We consider core–shell nanowires with prismatic geometry contacted with two or more superconductors in the presence of a magnetic field applied parallel to the wire. In this geometry, the lowest energy states are localized on the outer edges of the shell, which strongly inhibits the orbital effects of the longitudinal magnetic field that are detrimental to Majorana physics. Using a tight-binding model of coupled parallel chains, we calculate the topological phase diagram of the hybrid system in the presence of non-vanishing transverse potentials and finite relative phases between the parent superconductors. We show that having finite relative phases strongly enhances the stability of the induced topological superconductivity over a significant range of chemical potentials and reduces the value of the critical field associated with the topological quantum phase transition.


Sign in / Sign up

Export Citation Format

Share Document