The geometric phase analysis method based on the local high resolution discrete Fourier transform for deformation measurement

2014 ◽  
Vol 25 (2) ◽  
pp. 025402 ◽  
Author(s):  
Xianglu Dai ◽  
Huimin Xie ◽  
Huaixi Wang ◽  
Chuanwei Li ◽  
Zhanwei Liu ◽  
...  
2020 ◽  
Vol 59 (8) ◽  
pp. 2393
Author(s):  
Hongye Zhang ◽  
Xianglu Dai ◽  
Huihui Wen ◽  
Jinhao Liu ◽  
Zhanwei Liu ◽  
...  

2016 ◽  
Vol 171 ◽  
pp. 34-42 ◽  
Author(s):  
Hongye Zhang ◽  
Zhanwei Liu ◽  
Huihui Wen ◽  
Huimin Xie ◽  
Chao Liu

Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.


2008 ◽  
Vol 41 (3) ◽  
pp. 035408 ◽  
Author(s):  
J Kioseoglou ◽  
G P Dimitrakopulos ◽  
Ph Komninou ◽  
Th Karakostas ◽  
E C Aifantis

2020 ◽  
Vol 2 (3) ◽  
pp. 1105-1114 ◽  
Author(s):  
Jocelyn T. L. Gamler ◽  
Alberto Leonardi ◽  
Xiahan Sang ◽  
Kallum M. Koczkur ◽  
Raymond R. Unocic ◽  
...  

Bimetallic nanocrystals with core@shell architectures are versatile particles. Geometric phase analysis of TEM images and atomistic simulations are coupled to reveal the lattice relaxation as a function of lattice mismatch and shell thickness.


2003 ◽  
Vol 9 (S02) ◽  
pp. 952-953
Author(s):  
C.L. Johnson ◽  
M.J. Hÿtch ◽  
P.R. Buseck

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