Geometric phase analysis method using a subpixel displacement match algorithm

2020 ◽  
Vol 59 (8) ◽  
pp. 2393
Author(s):  
Hongye Zhang ◽  
Xianglu Dai ◽  
Huihui Wen ◽  
Jinhao Liu ◽  
Zhanwei Liu ◽  
...  
2016 ◽  
Vol 171 ◽  
pp. 34-42 ◽  
Author(s):  
Hongye Zhang ◽  
Zhanwei Liu ◽  
Huihui Wen ◽  
Huimin Xie ◽  
Chao Liu

Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.


2008 ◽  
Vol 41 (3) ◽  
pp. 035408 ◽  
Author(s):  
J Kioseoglou ◽  
G P Dimitrakopulos ◽  
Ph Komninou ◽  
Th Karakostas ◽  
E C Aifantis

2020 ◽  
Vol 2 (3) ◽  
pp. 1105-1114 ◽  
Author(s):  
Jocelyn T. L. Gamler ◽  
Alberto Leonardi ◽  
Xiahan Sang ◽  
Kallum M. Koczkur ◽  
Raymond R. Unocic ◽  
...  

Bimetallic nanocrystals with core@shell architectures are versatile particles. Geometric phase analysis of TEM images and atomistic simulations are coupled to reveal the lattice relaxation as a function of lattice mismatch and shell thickness.


2003 ◽  
Vol 9 (S02) ◽  
pp. 952-953
Author(s):  
C.L. Johnson ◽  
M.J. Hÿtch ◽  
P.R. Buseck

2009 ◽  
Vol 1199 ◽  
Author(s):  
Takanori Kiguchi ◽  
Kenta Aoyagi ◽  
Toyohiko J. Konno ◽  
Satoru Utsugi ◽  
Tomoaki Yamada ◽  
...  

AbstractThe nano-scale strain fields analysis around 90° domains and misfit dislocations in PbTiO3/SrTiO3 001 epitaxial thin film has been conducted using the geometric phase analysis (GPA) combined with high angle annular dark field - scanning transmission electron microscopy (HAADF-STEM). The films typically possess a-c mixed domain configuration with misfit dislocations. The PbTiO3 layer was formed from the two layer: the upper 200 nm layer shows the typical a- and c- mixed domain configuration where the a-domains are several tens nm in width; the bottom 100 nm layer shows the different domain configuration that the width is several nm. In the latter case, a-domains are terminated within the film and are short in length. On the other hand, the bottom of a-domains does not contact the film/substrate interface. It keeps away from the interface, and there is completely c-domain layer under a-domains. The HAADF-STEM-GPA shows that the strain fields around an a-domain and a misfit dislocation interact each other: the tensile strain field and lattice plane bending fit together. This result indicates that the a-domain originates from the misfit dislocation.


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