A readout circuit for wireless passive LC sensors and its application for gastrointestinal monitoring

2014 ◽  
Vol 25 (8) ◽  
pp. 085104 ◽  
Author(s):  
Kaikai Bao ◽  
Deyong Chen ◽  
Qiang Shi ◽  
Lijuan Liu ◽  
Jian Chen ◽  
...  
Keyword(s):  
2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE

2004 ◽  
Vol 40 (23) ◽  
pp. 1459 ◽  
Author(s):  
S.G. Kang ◽  
Y.S. Lee ◽  
H.C. Lee
Keyword(s):  

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 635
Author(s):  
Chih-Hsuan Lin ◽  
Chao-Hung Song ◽  
Kuei-Ann Wen

In this study, a multi-function microelectromechanical system (MEMS) was integrated with a MEMS oscillator, using the resonant frequency oscillation characteristics of the oscillator to provide the Lorentz current of the magnetometer to enhance a large dynamic range of reading, which eliminates the off-chip clock and current generator. The resonant frequency can be adjusted by adjusting the bias voltage of the oscillator to further adjust the sensitivity of the magnetometer. With the mechanical Q value characteristic, a great dynamic range can be achieved. In addition, using the readout circuit of the nested chopper and correlated double-sampling (CDS) to reduce the noise and achieve a smaller resolution, the calibration circuit compensates for errors caused by the manufacturing process. The frequency of the tuning range of the proposed structure is 17,720–19,924 Hz, and the tuning range of the measurement result is 110,620.36 ppm. The sensitivities of the x-, y-, and z-axes of the magnetometer with driving current of 2 mA are 218.3, 74.33, and 7.5 μV/μT for ambient pressure of 760 torr. The resolutions of the x-, y-, and z-axes of the magnetometer with driving current of 2 mA are 3.302, 9.69, and 96 nT/√Hz for ambient pressure of 760 torr.


Sensors ◽  
2021 ◽  
Vol 21 (3) ◽  
pp. 942
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Philippe Godignon ◽  
...  

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni2Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (p-diode) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R2 reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.


Author(s):  
F. Borghetti ◽  
N. Massari ◽  
D. Stoppa ◽  
A. Adami ◽  
L. Lorenzelli ◽  
...  

2002 ◽  
Vol 38 (7) ◽  
pp. 317 ◽  
Author(s):  
T. Kwok ◽  
J.J. Zhong ◽  
T. Wilkinson ◽  
W.A. Crossland

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