Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

Nanotechnology ◽

10.1088/0957-4484/23/39/395204 ◽

2012 ◽

Vol 23 (39) ◽

pp. 395204 ◽

Author(s):

A Fontserè ◽

A Pérez-Tomás ◽

M Placidi ◽

J Llobet ◽

N Baron ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

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Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

Applied Physics Express ◽

10.1143/apex.5.034103 ◽

2012 ◽

Vol 5 (3) ◽

pp. 034103

Author(s):

Farid Medjdoub ◽

Damien Ducatteau ◽

Malek Zegaoui ◽

Bertrand Grimbert ◽

Nathalie Rolland ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Confinement ◽

Electron Mobility Transistors ◽

Gan On Si ◽

Trapping Effects

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Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise

10.15368/theses.2014.17 ◽

2014 ◽

Author(s):

Michael Curtis Meyer Masuda

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

Frequency Noise ◽

High Electron ◽

Low Frequency Noise ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz

Applied Physics Express ◽

10.7567/1882-0786/ab56e2 ◽

2019 ◽

Vol 12 (12) ◽

pp. 126506 ◽

Author(s):

Hanlin Xie ◽

Zhihong Liu ◽

Yu Gao ◽

Kumud Ranjan ◽

Kenneth E. Lee ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

AIP Advances ◽

10.1063/1.4962544 ◽

2016 ◽

Vol 6 (9) ◽

pp. 095102 ◽

Author(s):

W. A. Sasangka ◽

G. J. Syaranamual ◽

R. I. Made ◽

C. V. Thompson ◽

C. L. Gan

Keyword(s):

High Temperature ◽

Electron Mobility ◽

Reverse Bias ◽

High Electron Mobility Transistors ◽

Threading Dislocation ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dislocation Movement ◽

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Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2020.3030341 ◽

2020 ◽

Vol 41 (12) ◽

pp. 1754-1757

Author(s):

Filip Wach ◽

Michael J. Uren ◽

Benoit Bakeroot ◽

Ming Zhao ◽

Stefaan Decoutere ◽

...

Keyword(s):

Charge Transport ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Low Field ◽

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An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

Electronics ◽

10.3390/electronics5020028 ◽

2016 ◽

Vol 5 (4) ◽

pp. 28 ◽

Author(s):

An-Jye Tzou ◽

Dan-Hua Hsieh ◽

Szu-Hung Chen ◽

Yu-Kuang Liao ◽

Zhen-Yu Li ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Carbon Doping ◽

High Electron ◽

Induced Current ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

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Novel packaging design for high-power GaN-on-Si high electron mobility transistors (HEMTs)

International Journal of Thermal Sciences ◽

10.1016/j.ijthermalsci.2012.10.003 ◽

2013 ◽

Vol 66 ◽

pp. 63-70 ◽

Author(s):

Stone Cheng ◽

Po-Chien Chou

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Packaging Design ◽

Electron Mobility Transistors ◽

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Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112768 ◽

2015 ◽

Author(s):

W. A. Sasangka ◽

G. J. Syaranamual ◽

C. L. Gan ◽

C. V. Thompson

Keyword(s):

Electron Mobility ◽

Reverse Bias ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gan On Si ◽

Physical Degradation

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Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2015.2442293 ◽

2015 ◽

Vol 36 (8) ◽

pp. 826-828 ◽

Author(s):

Michael J. Uren ◽

Markus Caesar ◽

Serge Karboyan ◽

Peter Moens ◽

Piet Vanmeerbeek ◽

...

Keyword(s):

Electric Field ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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