High field breakdown characteristics of carbon nanotube thin film transistors

Nanotechnology ◽

10.1088/0957-4484/24/40/405204 ◽

2013 ◽

Vol 24 (40) ◽

pp. 405204 ◽

Author(s):

Man Prakash Gupta ◽

Ashkan Behnam ◽

Feifei Lian ◽

David Estrada ◽

Eric Pop ◽

...

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Thin Film Transistors ◽

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Small-Hysteresis Flexible Carbon Nanotube Thin-Film Transistors using Stacked Architecture

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm50988.2021.9420917 ◽

2021 ◽

Author(s):

Yun Sun ◽

Dong-Sheng Zhu ◽

Yang Jian ◽

Chao Zang ◽

Dong-Ming Sun

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Thin Film Transistors

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High Field-Effect Mobility Bottom-Gated Metallorganic Chemical Vapor Deposition ZnO Thin-Film Transistors with SiO[sub 2]∕Si[sub 3]N[sub 4] Bilayer Gate Dielectric

Journal of The Electrochemical Society ◽

10.1149/1.3499348 ◽

2010 ◽

Vol 157 (12) ◽

pp. H1110 ◽

Author(s):

K. Remashan ◽

Y. S. Choi ◽

S. J. Park ◽

J. H. Jang

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Field Effect ◽

Gate Dielectric ◽

Chemical Vapor ◽

Zno Thin Film ◽

Field Effect Mobility

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Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

Nanotechnology ◽

10.1088/0957-4484/25/48/485703 ◽

2014 ◽

Vol 25 (48) ◽

pp. 485703 ◽

Author(s):

Nicola Coppedè ◽

Irina Valitova ◽

Farzaneh Mahvash ◽

Giuseppe Tarabella ◽

Paolo Ranzieri ◽

...

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Thin Film Transistors ◽

Titanyl Phthalocyanine

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p-Channel, n-Channel Thin Film Transistors and p−n Diodes Based on Single Wall Carbon Nanotube Networks

Nano Letters ◽

10.1021/nl048905o ◽

2004 ◽

Vol 4 (10) ◽

pp. 2031-2035 ◽

Author(s):

Yangxin Zhou ◽

Anshu Gaur ◽

Seung-Hyun Hur ◽

Coskun Kocabas ◽

Matthew A. Meitl ◽

...

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Thin Film Transistors ◽

Single Wall Carbon Nanotube ◽

Single Wall Carbon ◽

Carbon Nanotube Networks

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Macroelectronic Integrated Circuits Using High-Performance Separated Carbon Nanotube Thin-Film Transistors

ACS Nano ◽

10.1021/nn1021378 ◽

2010 ◽

Vol 4 (12) ◽

pp. 7123-7132 ◽

Author(s):

Chuan Wang ◽

Jialu Zhang ◽

Chongwu Zhou

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Integrated Circuits ◽

Thin Film Transistors ◽

High Performance

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Nanotransfer printing by use of noncovalent surface forces: Applications to thin-film transistors that use single-walled carbon nanotube networks and semiconducting polymers

Applied Physics Letters ◽

10.1063/1.1829774 ◽

2004 ◽

Vol 85 (23) ◽

pp. 5730-5732 ◽

Author(s):

Seung-Hyun Hur ◽

Dahl-Young Khang ◽

Coskun Kocabas ◽

John A. Rogers

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Thin Film Transistors ◽

Surface Forces ◽

Semiconducting Polymers ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon ◽

Carbon Nanotube Networks

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Low-Voltage Electronics Based on Carbon Nanotube Thin-Film Transistors with Hybrid Nanodielectric

2020 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS) ◽

10.1109/fleps49123.2020.9239544 ◽

2020 ◽

Author(s):

Vincenzo Pecunia ◽

Luis Portilla

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Thin Film Transistors ◽

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High Field-Effect Mobility Amorphous Indium-Tin-Zinc-Oxide Thin-Film Transistors Using Negatively Charged Aluminium-Oxynitride Gate Dielectrics

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.23919/am-fpd.2018.8437384 ◽

2018 ◽

Author(s):

Donggi Shin ◽

Kyungsoo Jang ◽

Cam Phu Thi Nguyen ◽

Heejun Park ◽

Jeongsoo Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

Gate Dielectrics ◽

Oxide Thin Film ◽

Field Effect Mobility ◽

Zinc Oxide Thin Film ◽

Aluminium Oxynitride

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Length dependent performance of single-wall carbon nanotube thin film transistors

Carbon ◽

10.1016/j.carbon.2015.05.008 ◽

2015 ◽

Vol 91 ◽

pp. 370-377 ◽

Author(s):

Yuki Kuwahara ◽

Fumiyuki Nihey ◽

Shigekazu Ohmori ◽

Takeshi Saito

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Thin Film Transistors ◽

Single Wall Carbon Nanotube ◽

Single Wall Carbon

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Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽

10.1039/c7ra10448k ◽

2017 ◽

Vol 7 (83) ◽

pp. 52517-52523 ◽

Author(s):

Jun Li ◽

Chuan-Xin Huang ◽

Jian-Hua Zhang

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Thin Film Transistors ◽

Thin Film Transistor ◽

Atomic Layer ◽

Electrical Performance ◽

Solution Processed ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon ◽

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

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