Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors

2014 ◽  
Vol 25 (15) ◽  
pp. 155201 ◽  
Author(s):  
Kyungjune Cho ◽  
Tae-Young Kim ◽  
Woanseo Park ◽  
Juhun Park ◽  
Dongku Kim ◽  
...  
2018 ◽  
Vol 2 (9) ◽  
pp. 1631-1641 ◽  
Author(s):  
S. Bebiche ◽  
P. A. Cisneros-Perez ◽  
T. Mohammed-Brahim ◽  
M. Harnois ◽  
J. Rault-Berthelot ◽  
...  

The electrical stabilities of n-type Organic Field-Effect Transistors (OFETs) based on dihydroindeno[1,2-b]fluorene and dihydroindeno[2,1-b]fluorene derivatives have been studied.


2020 ◽  
Vol 12 (50) ◽  
pp. 56330-56337
Author(s):  
Changyong Lan ◽  
SenPo Yip ◽  
Xiaolin Kang ◽  
You Meng ◽  
Xiuming Bu ◽  
...  

2012 ◽  
Vol 23 (48) ◽  
pp. 485201 ◽  
Author(s):  
Minhyeok Choe ◽  
Woojin Park ◽  
Jang-Won Kang ◽  
Sehee Jeong ◽  
Woong-Ki Hong ◽  
...  

2007 ◽  
Vol 90 (19) ◽  
pp. 192104 ◽  
Author(s):  
S. G. J. Mathijssen ◽  
M. Cölle ◽  
A. J. G. Mank ◽  
M. Kemerink ◽  
P. A. Bobbert ◽  
...  

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