AbstractCharge-carrier transport in the channel of bottom gate, top contact organic field effect transistors with anisotropic layers of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pentacene) obtained by zone casting was investigated using scanning Kelvin probe microscopy combined with atomic force microscopy. The TIPS-Pentacene continuous layers consisted of thin crystals unidirectionally oriented in the channel. Devices with perpendicular and parallel charge flow in the transistor channel were prepared. It was found that irregularities in the surface morphology at the semiconductor layer in the transistor channel are correlated with the local potential profile, and that the channel resistance strongly depends on the orientation of the TIPS-Pentacene crystals.
Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress
