Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN

2000 ◽  
Vol 9 (1) ◽  
pp. 12-17 ◽  
Author(s):  
A V Blant ◽  
O H Hughes ◽  
T S Cheng ◽  
S V Novikov ◽  
C T Foxon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Radio Frequency Plasma ◽  
Nitrogen Species ◽  
Plasma Sources ◽  
Frequency Plasma

Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates

2014 ◽  
Vol 7 (7) ◽  
pp. 071001 ◽  
Author(s):  
Tsutomu Araki ◽  
Satoru Uchimura ◽  
Junichi Sakaguchi ◽  
Yasushi Nanishi ◽  
Tatsuya Fujishima ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Radio Frequency Plasma ◽  
Frequency Plasma

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Yoshiki Saito ◽  
Kenji Kano ◽  
Tomo Muramatsu ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Nitridation Process ◽  
Frequency Plasma ◽  
Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Radio Frequency Plasma ◽  
Mbe Growth ◽  
Frequency Plasma ◽  
Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

Two-Step Growth of MgO Films on Sapphire (0001) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

2004 ◽  
Vol 21 (2) ◽  
pp. 410-413 ◽  
Author(s):  
Mei Zeng-Xia ◽  
Du Xiao-Long ◽  
Zeng Zhao-Quan ◽  
Guo Yang ◽  
Wang Jian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Radio Frequency Plasma ◽  
Frequency Plasma ◽  
Step Growth
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