Tunable permittivity of La-doped BaSnO3 thin films for near- and mid-infrared plasmonics

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

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The Study of Ferroelectric La-Doped PbTiO3 Thin Films Prepared by RF Magnetron Sputtering

Integrated Ferroelectrics ◽

10.1080/10584580390254970 ◽

2003 ◽

Vol 52 (1) ◽

pp. 223-228 ◽

Cited By ~ 3

Author(s):

Chengtao Yang ◽

Shuren Zhang ◽

Jingsong Liu ◽

Menqiang Wu

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

La Doped

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Deposition of Pb(Zr,Ti)O3-Thin Films on Substrates with Shape Memory Effect

MRS Proceedings ◽

10.1557/proc-596-493 ◽

1999 ◽

Vol 596 ◽

Author(s):

W. Biegel ◽

R. Klarmann ◽

M. Kuhn ◽

B. Wörz ◽

B. Stritzker

Keyword(s):

Thin Films ◽

Shape Memory ◽

Shape Memory Effect ◽

Memory Effect ◽

Ferroelectric Behavior ◽

Ceramic Films ◽

Pzt Films ◽

The One ◽

Film Substrate ◽

La Doped

AbstractPulsed Laser Deposition (PLD) was used to deposit La-doped Pb(Zr,Ti)O3 (PZT) thin films onto NiTi foils. The substrate alloy with composition Ni50Ti50 shows a strong shape memory effect with a transition temperature of about 80°C. This simple bicomponental system could have the potential of an actuator device (NiTi shows a strain up to 5 % during thermal cycling) with an inherent sensorial component (PZT) for the generated elongation. The deposited ceramic films were characterized with respect to their structural properties (XRD) and their ferroelectric behavior (P-E hysteresis). Under certain deposition conditions the growth of pure perovskite PZT on the polycrystalline shape memory alloy was observed. The growth morphology of PZT on NiTi was compared to the one of PZT on single crystalline substrates whereas no distinctive texture of the films on NiTi could be found. The ferroelectric behavior of the PZT films depend on the stage of bending of the film-substrate compound.

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Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.537.114 ◽

2013 ◽

Vol 537 ◽

pp. 114-117

Author(s):

X.A. Mei ◽

Rui Fang Liu ◽

C.Q. Huang ◽

J. Liu

Keyword(s):

Thin Films ◽

Hysteresis Loops ◽

Differential Resistance ◽

Rf Magnetron Sputtering ◽

Layered Perovskite ◽

Random Orientation ◽

Si Substrates ◽

Current Voltage ◽

Current Voltage Characteristics ◽

La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

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