Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge(001)

AbstractHafnium oxide (HfO2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However O3 showed better saturation behavior for O3exposure. Yet, 100% step coverage was achieved for ~100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160°C to 420°C. The lowest deposition rate was observed at 320°C. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200°C to 320°C. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.

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High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

Applied Physics Letters ◽

10.1063/1.1812832 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4112-4114 ◽

Cited By ~ 249

Author(s):

Seong Keun Kim ◽

Wan-Don Kim ◽

Kyung-Min Kim ◽

Cheol Seong Hwang ◽

Jaehack Jeong

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Atomic Layer Deposition ◽

High Dielectric Constant ◽

Atomic Layer ◽

Tio2 Thin Films ◽

Layer Deposition ◽

High Dielectric

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Synchrotron X-ray reflectivity study of high dielectric constant alumina thin films prepared by atomic layer deposition

Thin Solid Films ◽

10.1016/j.tsf.2005.12.162 ◽

2006 ◽

Vol 510 (1-2) ◽

pp. 159-163 ◽

Cited By ~ 26

Author(s):

Yongtaek Hwang ◽

Kyuyoung Heo ◽

Chang Hwan Chang ◽

Man Kil Joo ◽

Moonhor Ree

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Atomic Layer Deposition ◽

High Dielectric Constant ◽

Atomic Layer ◽

X Ray ◽

Layer Deposition ◽

High Dielectric

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Growth and Layer Characterization of SrTiO3 by Atomic Layer Deposition using Sr(tBu3Cp)2 and Ti(OMe)4

MRS Proceedings ◽

10.1557/proc-1155-c08-03 ◽

2009 ◽

Vol 1155 ◽

Cited By ~ 1

Author(s):

Mihaela Popovici ◽

Sven Van Elshocht ◽

Nicolas Menou ◽

Johan Swerts ◽

Dieter Pierreux ◽

...

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Atomic Layer Deposition ◽

Crystalline State ◽

Atomic Layer ◽

Lattice Parameter ◽

Index Of Refraction ◽

Layer Deposition ◽

Pulse Ratio

AbstractStrontium titanate (STO) thin films (45-67 % Sr) were deposited by atomic layer deposition using Sr(tBu3Cp)2/Ti(OMe)4/H2O as precursors. The Sr content of the layers is well controlled by the precursor pulse ratio, as indicated by Rutherford backscattering spectroscopy (RBS). The amount of Sr and Ti deposited depends on the Sr:Ti pulse ratio and indicates the enhancement of the Ti precursor reactivity in the presence of Sr-OH. STO compositions that are closer to stoichiometric SrTiO3 result in denser films with correspondingly higher index of refraction. The increase (decrease) of the Sr content over (below) 50 % leads to an expansion (contraction) of the lattice parameter corresponding to cubic SrTiO3 with a perovskite structure. The dielectric constant (extracted from film thickness series) and leakage current strongly depends both on the Sr content and the crystalline state of the films.

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Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates

Electrochemical and Solid-State Letters ◽

10.1149/1.2825763 ◽

2008 ◽

Vol 11 (3) ◽

pp. G9 ◽

Cited By ~ 50

Author(s):

Seong Keun Kim ◽

Cheol Seong Hwang

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Atomic Layer Deposition ◽

High Dielectric Constant ◽

Atomic Layer ◽

Layer Deposition ◽

High Dielectric

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Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01079 ◽

2021 ◽

Vol 3 (2) ◽

pp. 999-1005

Author(s):

Hyeok Jae Lee ◽

Jin Ha Hwang ◽

Ji-Yong Park ◽

Sang Woon Lee

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Surface Reaction ◽

Atomic Layer ◽

Reaction Route ◽

Layer Deposition

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Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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