Ion-plasma sputtering of Co and Mo nanometer thin films near the sputtering threshold

2020 ◽  
Vol 54 (6) ◽  
pp. 065204
Author(s):  
I I Amirov ◽  
M O Izyumov ◽  
V V Naumov ◽  
E S Gorlachev
1995 ◽  
Vol 4 (4) ◽  
pp. 390-393 ◽  
Author(s):  
N.V. Novikov ◽  
M.A. Voronkin ◽  
A.A. Smekhnov ◽  
N.I. Zaika ◽  
A.P. Zakharchuk

2017 ◽  
Vol 84 (1) ◽  
pp. 46-51 ◽  
Author(s):  
O. M. Bordun ◽  
B. O. Bordun ◽  
I. Yo. Kukharskyy ◽  
I. I. Medvid

2016 ◽  
Vol 17 (4) ◽  
pp. 515-519
Author(s):  
O.M. Bordun ◽  
M.V. Partyka ◽  
I.I. Medvid ◽  
I.Yo. Kukharskyy ◽  
V.V. Ptashnyk ◽  
...  

The structure, phase composition and surface morphology of thin films b-Ga2O3, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film b-Ga2O3 - fused quartz substrate υ-SiO2 in region 400–1600 cm-1 at 295 K were measured. The peaks in the spectrum of films b-Ga2O3, associated with vibration of Ga – O fragments in structural tetrahedral GaO4 and octahedral GaO6 complexes was interpreted.


2017 ◽  
Vol 81 (9) ◽  
pp. 1119-1126 ◽  
Author(s):  
P. V. Seredin ◽  
D. A. Goloschapov ◽  
A. S. Lenshin ◽  
V. E. Ternovaya ◽  
I. N. Arsentyev ◽  
...  

2021 ◽  
Vol 88 (6) ◽  
pp. 881-886
Author(s):  
O. M. Bordun ◽  
I. O. Bordun ◽  
I. M. Kofliuk ◽  
I. Yo. Kukharskyy ◽  
I. I. Medvid

The long-wavelength edge of the fundamental absorption band of thin Y2O3 films obtained by radiofrequency ion-plasma sputtering is investigated. The edge of interband absorption after annealing of the films in an atmosphere of argon, oxygen, or a mixture of these gases is shown to be approximated well by the Urbach empirical rule. Diffractograms of the obtained films were studied and a model of a heavily doped or defective semiconductor in the quasi-classical approximation was used to analyze the experimental results. This model allows determining the radius of the basic electronic state, the screening radius, and the rootmean-square potential depending on the sputtering atmosphere.


2008 ◽  
Vol 5 (9) ◽  
pp. 3135-3137
Author(s):  
Shingo Masaki ◽  
Hisayuki Nakanishi ◽  
Mutsumi Sugiyama ◽  
Shigefusa F. Chichibu

Author(s):  
Олег Морозов ◽  
Oleg Morozov ◽  
Валерий Кокорин ◽  
Valeriy Kokorin ◽  
Владимир Табаков ◽  
...  

Basic methods to increase durability of die working parts including processes of cold plastic deformation at anti-wear coatings application by a method of ion-plasma sputtering are considered. A physical model of cold plastic deformation of samples made of heat-resistant steel H12M is presented.


Author(s):  
Е.В. Фомин ◽  
А.Д. Бондарев ◽  
И.П. Сошников ◽  
N.B. Bercu ◽  
L. Giraudet ◽  
...  

The paper presents the results of the synthesis of thin aluminum nitride films by reactive ion-plasma sputtering and the study of their properties with the aim of using as the protective coatings for the high-power AlxGa1-xAs/GaAs semiconductor laser heterostructures. EDS studies and ellipsometry showed that at a residual pressure in the chamber of the order of ~10-5 Torr, a layer of aluminum oxynitride is formed in the films. In this case, the film-substrate heterointerface can undergo oxidation. However, AlN films with a thickness of the order of 100 nm grown in a pure nitrogen medium with a residual pressure of ~10-7 Torr apparently do not contain oxygen, and can reliably prevent its penetration into the heterointerface region. Potentially, they can serve as effective protection for oxidation sensitive heterostructures.


2021 ◽  
Vol 1 (12 (109)) ◽  
pp. 22-28
Author(s):  
Aladin Eko Purkuncoro ◽  
Rudy Soenoko ◽  
Dionysius Joseph Djoko Herry Santjojo ◽  
Yudy Surya Irawan

Carbon thin films on SKD11 steel were deposited by 40 kHz frequency plasma sputtering technique using a waste of battery carbon rods in argon plasma, and their mechanical properties were investigated by various target-substrate distances (1 cm, 1.7 cm, 2 cm, and 2.4 cm). The power used is 340 watts, the vacuum time is 90 minutes, and the gas flow rate is 80 ml/minute. The deposition time of carbon in plasma sputtering is 120 minutes with the initial temperature (temperature during vacuum) of 28 oC and the final temperature (the temperature after plasma sputtering) is 300 oC. The hardness value of SKD11 steel deposited with carbon thin films on SKD11 with target-substrate distance was tested using the Vickers microhardness test. Testing the thickness of the carbon thin films on the SKD11 steel substrate was carried out using a Nikon type 59520 optical microscope. Qualitative analysis of the thickness of the carbon thin films on the SKD11 steel substrate at a scale of 20 μm is shown by an optical microscope. Qualitatively, the thin film at a distance of 1.7 cm looks the brightest and thickest than other distance variations. Based on the Vickers microhardness test and Nikon type 59520 optical microscope, at the distance of 1 cm to 1.7 cm, the average thickness and hardness increased from 10,724 μm (286.6 HV) to 13,332 μm (335.9 HV). Furthermore, at the variation of the distance from 1.7 cm to 2.4 cm, the average thickness and hardness continued to decrease from 13.332 μm (335.9 HV) to 7.257 μm (257.3 HV). The possibility of interrupting atoms colliding with argon atoms in inert conditions increases at a long distance, thus causing the deposition flux on the SKD11 steel substrate to decrease


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