scholarly journals Structure and Vibrational Spectra of thin Films β-Ga2O3

2016 ◽  
Vol 17 (4) ◽  
pp. 515-519
Author(s):  
O.M. Bordun ◽  
M.V. Partyka ◽  
I.I. Medvid ◽  
I.Yo. Kukharskyy ◽  
V.V. Ptashnyk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
High Frequency ◽  
Quartz Substrate ◽  
Plasma Sputtering ◽  
Ir Reflection ◽  
Ion Plasma ◽  
Fused Quartz ◽  
Structure Phase

The structure, phase composition and surface morphology of thin films b-Ga2O3, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film b-Ga2O3 - fused quartz substrate υ-SiO2 in region 400–1600 cm-1 at 295 K were measured. The peaks in the spectrum of films b-Ga2O3, associated with vibration of Ga – O fragments in structural tetrahedral GaO4 and octahedral GaO6 complexes was interpreted.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

The effect of ion energy on the surface morphology of platinum film under high-frequency ion plasma sputtering

2013 ◽  
Vol 39 (1) ◽  
pp. 130-133 ◽  
Author(s):  
I. I. Amirov ◽  
V. V. Naumov ◽  
M. O. Izyumov ◽  
R. S. Selyukov
Keyword(s):  
Surface Morphology ◽  
High Frequency ◽  
Ion Energy ◽  
Plasma Sputtering ◽  
Ion Plasma

Pulsed Laser Deposited Oxide Green Emitting Thin Film Phosphors : Optimization of Growth Conditions

2006 ◽  
Vol 988 ◽  
Author(s):  
P. Thiyagarajan ◽  
M. Kottaismay ◽  
M S Ramachandra Rao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Diffuse Reflectance Spectroscopy ◽  
Quartz Substrate ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Ex Situ ◽  
Morphological Studies

AbstractStructural and photoluminescence (PL) properties of Zn2(1-x)MnxSiO4 (1 ≤ x ≤ 5) and diffuse reflectance spectroscopy (DRS) and morphological studies of ZnGa2O4:Mn thin film green emitting phosphors grown using pulsed laser deposition (PLD) technique have been investigated. Zn2(1-x)MnxSiO4 thin films grown on Si substrate at 700°C in 300 mTorr of oxygen partial pressure, upon ex-situ annealing at higher temperatures exhibit superior PL intensity. ZnGa2O4:Mn phosphor thin films grown on quartz substrate at 650oC and in-situ annealed in 300mTorr of oxygen partial pressure show better emission intensity. For both Zn2SiO4:Mn and ZnGa2O4:Mn phosphors, luminescence can be assigned to 4T1 – 6A1 transition of Mn2+ within the 3d orbital giving rise to emission at 525 and 503 nm, respectively.

Ion-plasma sputtering of Co and Mo nanometer thin films near the sputtering threshold

2020 ◽  
Vol 54 (6) ◽  
pp. 065204
Author(s):  
I I Amirov ◽  
M O Izyumov ◽  
V V Naumov ◽  
E S Gorlachev
Keyword(s):  
Thin Films ◽  
Plasma Sputtering ◽  
Ion Plasma

Magnetization in Nanocrystalline PLD Zinc Ferrite Thin Films Deposited on Fused Quartz Substrate

2017 ◽  
Vol 31 (1) ◽  
pp. 107-116 ◽  
Author(s):  
Aashish Jha ◽  
Naresh Kumar ◽  
Mohit Sahni ◽  
Amit Srivastava ◽  
Jyotirmay Dwivedi ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Ferrite ◽  
Quartz Substrate ◽  
Fused Quartz ◽  
Ferrite Thin Films

In2Te3 thin films: a promising nonlinear optical material with tunable nonlinear absorption response

RSC Advances ◽  
2016 ◽  
Vol 6 (105) ◽  
pp. 103357-103363 ◽  
Author(s):  
Jun Wang ◽  
Feng Jin ◽  
Xinran Cao ◽  
Shuai Cheng ◽  
Chaochao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Nonlinear Absorption ◽  
Nonlinear Optical ◽  
Quartz Substrate ◽  
Optical Material ◽  
Nonlinear Optical Material ◽  
Radio Frequency Magnetron Sputtering ◽  
Fused Quartz

A series of In2Te3 thin films with various thicknesses was prepared on fused quartz substrate using a radio-frequency magnetron sputtering method.

scholarly journals Narrowband Spontaneous Emission Amplification from a Conjugated Oligomer Thin Film

Polymers ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 232
Author(s):  
Mohamad S. AlSalhi ◽  
Mamduh J. Aljaafreh ◽  
Saradh Prasad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Absorption Spectrum ◽  
Spontaneous Emission ◽  
Spin Coating ◽  
Quartz Substrate ◽  
Pump Energy ◽  
Laser Induced Fluorescence ◽  
Time Resolved

In this paper, we studied the laser and optical properties of conjugated oligomer (CO) 1,4-bis(9-ethyl-3-carbazo-vinylene)-9,9-dihexyl-fluorene (BECV-DHF) thin films, which were cast onto a quartz substrate using a spin coating technique. BECV-DHF was dissolved in chloroform at different concentrations to produce thin films with various thicknesses. The obtained results from the absorption spectrum revealed one sharp peak at 403 nm and two broads at 375 and 428 nm. The photoluminescence (PL) spectra were recorded for different thin films made from different concentrations of the oligomer solution. The threshold, laser-induced fluorescence (LIF), and amplified spontaneous emission (ASE) properties of the CO BECV-DHF thin films were studied in detail. The ASE spectrum was achieved at approximately 482.5 nm at a suitable concentration and sufficient pump energy. The time-resolved spectroscopy of the BECV-DHF films was demonstrated at different pump energies.

Receiving Properties of Thin-Film Spiral Antenna Fabricated on Fused-Quartz Substrate Backed by Cupper Plate Reflector

2012 ◽  
Vol E95.C (5) ◽  
pp. 936-941 ◽  
Author(s):  
Le Ngoc SON ◽  
Takashi TACHIKI ◽  
Takashi UCHIDA ◽  
Yoshizumi YASUOKA
Keyword(s):  
Thin Film ◽  
Quartz Substrate ◽  
Spiral Antenna ◽  
Fused Quartz

Structure, phase composition, and properties of the titanium surface modified by electron-ion-plasma methods

2016 ◽  
Vol 10 (5) ◽  
pp. 1092-1095 ◽  
Author(s):  
N. N. Koval ◽  
Yu. F. Ivanov ◽  
Yu. Kh. Akhmadeev ◽  
I. V. Lopatin ◽  
E. A. Petrikova ◽  
...  
Keyword(s):  
Phase Composition ◽  
Titanium Surface ◽  
Ion Plasma ◽  
Structure Phase ◽  
Plasma Methods ◽  
Surface Modified

RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
Ali Mahmud ◽  
T. S. Kalkur ◽  
N. Cramer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Substrate Temperature ◽  
High Frequency ◽  
Satellite Communications ◽  
Ferroelectric Thin Films ◽  
Paraelectric State ◽  
Deposited Films

ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

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