Additive printing of pure nanocrystalline nickel thin films using room environment electroplating

2019 ◽  
Vol 31 (5) ◽  
pp. 055301 ◽  
Author(s):  
Ali Behroozfar ◽  
Md Emran Hossain Bhuiyan ◽  
Soheil Daryadel ◽  
David Edwards ◽  
Brian J Rodriguez ◽  
...  
Keyword(s):  
Thin Films ◽  
Nanocrystalline Nickel ◽  
Nickel Thin Films

Sputtered Nanocrystalline Nickel Thin Films for Solar Thermal Energy Applications

2009 ◽  
Vol 1 (1) ◽  
pp. 32-36 ◽  
Author(s):  
Yongbai Yin ◽  
Yongqiang Pan ◽  
Sergey Rubanov ◽  
Marcela M. M. Bilek ◽  
David R. McKenzie
Keyword(s):  
Thin Films ◽  
Thermal Energy ◽  
Solar Thermal ◽  
Solar Thermal Energy ◽  
Nanocrystalline Nickel ◽  
Nickel Thin Films ◽  
Energy Applications

scholarly journals Structural study of nanocrystalline nickel thin films

2007 ◽  
Vol 40 (s1) ◽  
pp. s377-s382 ◽  
Author(s):  
N. Radic ◽  
P. Dubcek ◽  
S. Bernstorff ◽  
I. Djerdj ◽  
A. M. Tonejc
Keyword(s):  
Thin Films ◽  
Structural Study ◽  
Nanocrystalline Nickel ◽  
Nickel Thin Films

scholarly journals PS15 Synthesis and Properties of Pulse-deposited Nanocrystalline Nickel Thin Films

2008 ◽  
Vol 2008 (0) ◽  
pp. _PS15-1_-_PS15-2_
Author(s):  
Yuki ISOGAWA ◽  
Keisuke TANAKA ◽  
Hirohisa KIMACHI
Keyword(s):  
Thin Films ◽  
Nanocrystalline Nickel ◽  
Nickel Thin Films

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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