Direct fabrication of two-dimensional ReS2 on SiO2/Si substrate by a wide-temperature-range atomic layer deposition

2019 ◽  
Vol 31 (5) ◽  
pp. 055602 ◽  
Author(s):  
Jun Lv ◽  
Lei Liu
Keyword(s):  
Atomic Layer Deposition ◽  
Wide Temperature Range ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Si Substrate ◽  
Temperature Range ◽  
Layer Deposition ◽  
Direct Fabrication

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

Low-temperature wafer-scale synthesis of two-dimensional SnS2

Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17712-17721 ◽  
Author(s):  
Jung Joon Pyeon ◽  
In-Hwan Baek ◽  
Weon Cheol Lim ◽  
Keun Hwa Chae ◽  
Seong Ho Han ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Wafer Scale ◽  
Layer Deposition

Two-dimensional continuous SnS2 is synthesized over a wafer at low-temperature (≤350 °C) by sulfurization combined with atomic layer deposition.

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