Conductive filament shape in HfO2 electrochemical metallization cells under a range of forming voltages

2019 ◽  
Vol 31 (7) ◽  
pp. 075706
Author(s):  
Heidi Clarke ◽  
Laura Deremo ◽  
Joseph Anderson ◽  
Sabyasachi Ganguli ◽  
Patrick J Shamberger
Author(s):  
Bhanu Sood ◽  
Michael Pecht

Abstract Failures in printed circuit boards account for a significant percentage of field returns in electronic products and systems. Conductive filament formation is an electrochemical process that requires the transport of a metal through or across a nonmetallic medium under the influence of an applied electric field. With the advent of lead-free initiatives, boards are being exposed to higher temperatures during lead-free solder processing. This can weaken the glass-fiber bonding, thus enhancing conductive filament formation. The effect of the inclusion of halogen-free flame retardants on conductive filament formation in printed circuit boards is also not completely understood. Previous studies, along with analysis and examinations conducted on printed circuit boards with failure sites that were due to conductive filament formation, have shown that the conductive path is typically formed along the delaminated fiber glass and epoxy resin interfaces. This paper is a result of a year-long study on the effects of reflow temperatures, halogen-free flame retardants, glass reinforcement weave style, and conductor spacing on times to failure due to conductive filament formation.


2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  

2021 ◽  
pp. 2100605
Author(s):  
Shu‐Chin Tsai ◽  
Hong‐Yang Lo ◽  
Chih‐Yang Huang ◽  
Min‐Ci Wu ◽  
Yi‐Tang Tseng ◽  
...  

2013 ◽  
Vol 58 (5) ◽  
pp. 47-52 ◽  
Author(s):  
M. N. Kozicki ◽  
P. Dandamudi ◽  
H. J. Barnaby ◽  
Y. Gonzalez-Velo

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.


2016 ◽  
Vol 27 (42) ◽  
pp. 425709 ◽  
Author(s):  
Heidi Clarke ◽  
Timothy Brown ◽  
Jianjun Hu ◽  
Raj Ganguli ◽  
Amber Reed ◽  
...  
Keyword(s):  

2021 ◽  
Vol 41 (10) ◽  
pp. 974-976
Author(s):  
V. V. Kuts ◽  
M. S. Razumov ◽  
A. K. Dosumov ◽  
S. A. Chevychelov

Author(s):  
Kazuto Mizutani ◽  
Takuya HOSHII ◽  
Hitoshi WAKABAYASHI ◽  
Kazuo TSUTSUI ◽  
Edward Yi Chang ◽  
...  

Abstract The effects of 1-nm-thick CeOx capping on 7.5-nm-thick Y-doped HfO2 films on the ferroelectric characteristics are investigated. From the ferroelectric characteristics of the samples annealed at different temperatures from 450 to 600oC and annealing durations, the time (τ) required to stabilize the ferroelectric phase at each temperature was shortened by the capping. The identical activation energy (Ea) of 2.65 eV for ferroelectric stabilization without and with capping suggests the same kinetics for phase transformation. However, an increase in the remnant polarization (Pr) was obtained. Only a few Ce atoms diffused into the underlying HfO2 film even after 600oC annealing. Ferroelectric switching tests revealed an improvement in endurance from 107 to 1010 by the capping, presumably owing to the suppression of conductive filament formation. Therefore, CeOx capping is effective in promoting the ferroelectric phase in HfO2 with high switching endurance.


Sign in / Sign up

Export Citation Format

Share Document