ELECTRON-PHONON INTERACTIONS IN INTERSUBBAND LASER HETEROSTRUCTURES

We present a simple semianalytical model, which allows comprehensive analysis of the LO-phonon assisted electron relaxation in quantum well intersubband semiconductor lasers. Examples of scattering rate tailoring in type-I double quantum well heterostructures and analysis of the subband depopulation process in type-II heterostructures illustrate applicability of the model.

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High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab110b ◽

2019 ◽

Vol 34 (5) ◽

pp. 055013 ◽

Cited By ~ 1

Author(s):

Zhongliang Qiao ◽

Xiang Li ◽

Hong Wang ◽

Te Li ◽

Xin Gao ◽

...

Keyword(s):

Quantum Well ◽

Semiconductor Lasers ◽

High Performance ◽

Double Quantum ◽

Double Quantum Well

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Dynamical spin separation induced by spin-dependent type-II band alignment in a diluted magnetic double quantum well

Applied Physics Letters ◽

10.1063/1.2207488 ◽

2006 ◽

Vol 88 (21) ◽

pp. 212106 ◽

Cited By ~ 3

Author(s):

T. Koyama ◽

K. Kayanuma ◽

I. Souma ◽

A. Murayama ◽

Y. Oka

Keyword(s):

Quantum Well ◽

Band Alignment ◽

Double Quantum ◽

Type Ii ◽

Double Quantum Well ◽

Dynamical Spin ◽

Diluted Magnetic ◽

Dependent Type

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Dynamical spin separation in a double quantum well of diluted magnetic semiconductor due to spin-dependent type-II band alignment

Journal of Luminescence ◽

10.1016/j.jlumin.2006.01.301 ◽

2007 ◽

Vol 122-123 ◽

pp. 831-833

Author(s):

T. Koyama ◽

K. Kayanuma ◽

I. Souma ◽

A. Murayama ◽

Y. Oka

Keyword(s):

Quantum Well ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Band Alignment ◽

Double Quantum ◽

Type Ii ◽

Double Quantum Well ◽

Dynamical Spin ◽

Diluted Magnetic ◽

Dependent Type

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Very low transparency currents in double quantum well InGaAs semiconductor lasers with δ-doped resonant tunneling

Applied Physics Letters ◽

10.1063/1.2825465 ◽

2008 ◽

Vol 92 (2) ◽

pp. 021109 ◽

Cited By ~ 4

Author(s):

D. Fekete ◽

M. Yasin ◽

A. Rudra ◽

E. Kapon

Keyword(s):

Quantum Well ◽

Semiconductor Lasers ◽

Resonant Tunneling ◽

Double Quantum ◽

Double Quantum Well

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AlAs monolayer dependence of the radiative recombination rate in a type II GaAs–AlAs double quantum well

Solid State Communications ◽

10.1016/s0038-1098(00)00044-2 ◽

2000 ◽

Vol 114 (7) ◽

pp. 389-394 ◽

Cited By ~ 3

Author(s):

D. Martins ◽

C. Gourdon ◽

P. Lavallard ◽

R. Planel

Keyword(s):

Quantum Well ◽

Recombination Rate ◽

Radiative Recombination ◽

Double Quantum ◽

Type Ii ◽

Radiative Recombination Rate ◽

Double Quantum Well

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High-Efficiency 808-nm InGaAlAs–AlGaAs Double-Quantum-Well Semiconductor Lasers With Asymmetric Waveguide Structures

IEEE Photonics Technology Letters ◽

10.1109/lpt.2008.918857 ◽

2008 ◽

Vol 20 (8) ◽

pp. 566-568 ◽

Cited By ~ 22

Author(s):

Lin Li ◽

Guojun Liu ◽

Zhanguo Li ◽

Mei Li ◽

Hui Li ◽

...

Keyword(s):

Quantum Well ◽

Semiconductor Lasers ◽

High Efficiency ◽

Double Quantum ◽

Double Quantum Well

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Wavefunctions and Optical Gain in $$ \text{In}_{0.3} {\text{Ga}}_{0.7} {\text{As}}/{\text{GaAs}}_{0.4} {\text{Sb}}_{0.6} $$In0.3Ga0.7As/GaAs0.4Sb0.6 Type-II Double Quantum Well Nanoheterostructure Under External Uniaxial Strain

Engineering Vibration, Communication and Information Processing - Lecture Notes in Electrical Engineering ◽

10.1007/978-981-13-1642-5_13 ◽

2018 ◽

pp. 143-151

Author(s):

Amit Kumar Singh ◽

Amit Rathi ◽

Md. Riyaj ◽

P. A. Alvi

Keyword(s):

Quantum Well ◽

Optical Gain ◽

Uniaxial Strain ◽

Double Quantum ◽

Type Ii ◽

Double Quantum Well

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MAGNETO-LUMINESCENCE OF A SINGLE LATERAL ISLAND FORMED IN A TYPE - II GaAs/AlAs QW

International Journal of Modern Physics B ◽

10.1142/s0217979204027499 ◽

2004 ◽

Vol 18 (27n29) ◽

pp. 3807-3812 ◽

Cited By ~ 2

Author(s):

BARBARA CHWALISZ ◽

ANDRZEJ WYSMOLEK ◽

ROMAN STȨPNIEWSKI ◽

ADAM BABINSKI ◽

MAREK POTEMSKI ◽

...

Keyword(s):

Quantum Wells ◽

Emission Lines ◽

Luminescence Spectra ◽

Double Quantum ◽

Type I ◽

Type Ii ◽

Quantum Well Structures ◽

Indirect Excitons ◽

Double Quantum Well ◽

Efficient Type

Ensembles of sharp emission lines present in the macro-luminescence of type-II GaAs / AlAs double quantum well structures were studied. Micro-luminescence experiments allowed us to conclude that the sharp emission lines originate from lateral GaAlAs islands of a few μm in diameter, formed in the structure. They serve as efficient type-I recombination centers for indirect excitons and/or carriers diffusing in the GaAs / AlAs QW structure. Magneto-luminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells. The observed emission is assigned to the recombination of neutral excitons as well as excitonic molecules.

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