scholarly journals The suitability of ultrasonic and megasonic cleaning of nanoscale patterns in ammonia hydroxide solutions for particle removal and feature damage

2020 ◽  
Vol 35 (4) ◽  
pp. 045001
Author(s):  
Chun-Lin Chu ◽  
Te-Yun Lu ◽  
Yiin-Kuen Fuh
Keyword(s):  
Particle Removal ◽  
Megasonic Cleaning ◽  
Nanoscale Patterns

Particle removal from semiconductor wafers by megasonic cleaning

1996 ◽  
Vol 27 ◽  
pp. S427-S428 ◽  
Author(s):  
T.H. Kuehn ◽  
D.B. Kittelson ◽  
Y. Wu ◽  
R. Gouk
Keyword(s):  
Particle Removal ◽  
Megasonic Cleaning

High Efficiency Single Wafer Cleaning for Wafer Bonding-Based 3D Integration Applications

2012 ◽  
Vol 187 ◽  
pp. 269-272 ◽  
Author(s):  
Don Dussault ◽  
F. Fournel ◽  
V. Dragoi
Keyword(s):  
Removal Efficiency ◽  
Wafer Bonding ◽  
High Efficiency ◽  
Current Work ◽  
Particle Removal ◽  
3D Integration ◽  
Production Scale ◽  
Megasonic Cleaning ◽  
Wafer Cleaning ◽  
Transducer Design

Current work describes development, testing and verification of a single wafer megasonic cleaning method utilizing a transducer design that meets the extreme particle neutrality, Particle Removal Efficiency (PRE), and repeatability requirements of production scale wafer bonding and other applications requiring extremely low particle levels.

Particle Removal Efficiency and Damage Analysis on Silicon Wafers after Megasonic Cleaning in Solvents

2009 ◽  
Vol 23 (12) ◽  
pp. 1709-1721 ◽  
Author(s):  
Francesca Barbagini ◽  
Sandip Halder ◽  
Tom Janssens ◽  
Karine Kenis ◽  
Kurt Wostyn ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Silicon Wafers ◽  
Damage Analysis ◽  
Particle Removal ◽  
Megasonic Cleaning

Ex Situ Bubble Generation, Enhancing the Particle Removal Rate for Single Wafer Megasonic Cleaning Processes

2007 ◽  
Vol 134 ◽  
pp. 201-204 ◽  
Author(s):  
Frank Holsteyns ◽  
Tom Janssens ◽  
Sophia Arnauts ◽  
Wouter Van der Putte ◽  
Vincent Minsier ◽  
...  
Keyword(s):  
Removal Rate ◽  
Ex Situ ◽  
Particle Removal ◽  
Bubble Generation ◽  
Megasonic Cleaning

Impact of Re-Gasified Water on Megasonic Cleaning

2007 ◽  
Vol 134 ◽  
pp. 217-220 ◽  
Author(s):  
Boon Cheng Goh ◽  
Felicia Goh ◽  
Christopher Lim ◽  
Zainab Ismail ◽  
Mei Sheng Zhou
Keyword(s):  
Removal Efficiency ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Cavitation Activity

Megasonic cleaning using de-gassed water (less than 2ppm N2, O2, CO2) in a 300mm batch immersion tool often does not give optimal particle performance, with particle streaks and clusters added onto the wafer, and low particle removal efficiency (PRE). When water was re-gasified with N2, the resultant stable cavitation activity reduced particle adders and increased PRE. With N2 concentration increased to just above 5ppm, number of particle adders decreased by three folds. Optimal particle performance could be obtained by operating at an N2 level close to saturation.

Removal of Submicron Particles Using High Frequency Ultrasonics

1996 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Fen Dai
Keyword(s):  
High Frequency ◽  
Semiconductor Manufacturing ◽  
Submicron Particles ◽  
Particle Removal ◽  
Cleaning Process ◽  
Submicron Particle ◽  
New Techniques ◽  
Megasonic Cleaning ◽  
Ultrasonic Cleaning ◽  
Particulate Contamination

Abstract High-frequency ultrasonic cleaning is widely used in the semiconductor and other industries affected by contamination for the removal of particulate contamination. High frequency (near 1 MHz) ultrasonic cleaning (known as megasonic cleaning) is specially used in semiconductor manufacturing [1]. Many studies concerning submicron particle removal using megasonic and ultrasonic cleaning has been conducted recently [2–7]. The megsonic cleaning process proved to be the essential processes in cleaning silicon wafers after processes such as CMP, RIE, CVD, Sputter, etc. This paper introduces recent results that involve new techniques for introducing the ultrasonic energy in the cleaning bath.

Studies of the Relationship between Megasonics, Surface Etching, and Particle Removal in SC-1 Solutions

1995 ◽  
Vol 386 ◽  
Author(s):  
S. L. Cohen ◽  
D. Rath ◽  
G. Lee ◽  
B. Furman ◽  
K. R. Pope ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Acoustic Streaming ◽  
Particle Surface ◽  
Native Oxide ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Thermally Activated ◽  
Surface Etching ◽  
Wafer Cleaning ◽  
Oxide Substrates

ABSTRACTWafer cleaning studies have been performed so as to understand the influence of acoustic (megasonic) energy on particle removal in dilute SC-1 solutions. Surface etching alone (up to 60Å) has been found to be insufficient to completely remove silicon nitride surface particles from native oxide surfaces in the absence of megasonics. For megasonic cleaning processes the minimum surface etching required for complete nitride particle removal is significantly lower (between 3–12Å) than for a non-megasonic process. The exact 'threshold' for surface etching will depend on the chemical nature of the particle/surface and the megasonics power. Megasonics energy does not appear to enhance chemical etching of the substrate, at least for silicon oxide substrates, however, it significantly improves particle removal. This data suggests that the particle removal process can benefit from both a thermally activated component (etching) as well as an acoustic component (cavitation/ acoustic streaming).

Evaluation of Megasonic Cleaning for Sub-90nm Technologies

2005 ◽  
Vol 103-104 ◽  
pp. 141-146 ◽  
Author(s):  
Guy Vereecke ◽  
Frank Holsteyns ◽  
Sophia Arnauts ◽  
S. Beckx ◽  
P. Jaenen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Mass Balance ◽  
Semiconductor Manufacturing ◽  
Particle Removal ◽  
Dissolved Gas ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
High Particle ◽  
The Cost

Cleaning of nanoparticles (< 50nm ) is becoming a major challenge in semiconductor manufacturing and the future use of traditional methods, such as megasonic cleaning, is questioned. In this paper the capability of megasonic cleaning to remove nanoparticles without inflicting damage to fragile structures is investigated. The role of dissolved gas in cleaning efficiency indicates that cavitation is the main cleaning mechanism. Consequently gas mass-balance analyses are needed to optimize the performance of cleaning tools. When gas is dissolved in the cleaning present tools can remove nanoparticles down to about 30 nm using dilute chemistries at low temperature. Ultimate performance is limited by cleaning uniformity, which depends on tool design and operation. However no tool reached the target of high particle removal efficiency andlow damage. Significantly lower damage could only be obtained by decreasing the power, at the cost of a lower cleaning efficiency for nanoparticles. The development of damage-free megasonic is discussed.

Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface

2012 ◽  
Vol 187 ◽  
pp. 9-10
Author(s):  
W. Melitz ◽  
J.B. Clemens ◽  
J. Shen ◽  
E.A. Chagarov ◽  
S. Lee ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Atomic Layer ◽  
Semiconductor Surface ◽  
Angle Of Incidence ◽  
Particle Removal ◽  
Cleaning Efficiency ◽  
Microscopy Imaging ◽  
Megasonic Cleaning ◽  
Before And After ◽  
Oxide Deposition

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.

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