Removal of Submicron Particles Using High Frequency Ultrasonics

1996 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Fen Dai
Keyword(s):  
High Frequency ◽  
Semiconductor Manufacturing ◽  
Submicron Particles ◽  
Particle Removal ◽  
Cleaning Process ◽  
Submicron Particle ◽  
New Techniques ◽  
Megasonic Cleaning ◽  
Ultrasonic Cleaning ◽  
Particulate Contamination

Abstract High-frequency ultrasonic cleaning is widely used in the semiconductor and other industries affected by contamination for the removal of particulate contamination. High frequency (near 1 MHz) ultrasonic cleaning (known as megasonic cleaning) is specially used in semiconductor manufacturing [1]. Many studies concerning submicron particle removal using megasonic and ultrasonic cleaning has been conducted recently [2–7]. The megsonic cleaning process proved to be the essential processes in cleaning silicon wafers after processes such as CMP, RIE, CVD, Sputter, etc. This paper introduces recent results that involve new techniques for introducing the ultrasonic energy in the cleaning bath.

Noncontact Physical Removal of Nano-Scale Particles From Surfaces

2001 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Hong Lin
Keyword(s):  
Semiconductor Manufacturing ◽  
Pressure Fluctuations ◽  
Acoustic Streaming ◽  
Particle Removal ◽  
Cleaning Process ◽  
Sound Waves ◽  
Megasonic Cleaning ◽  
Nano Scale ◽  
Technology Roadmap ◽  
Sonic Energy

Abstract With the International Technology Roadmap for Semiconductors decreasing the particle removal requirements from 125nm (0.3–0.75/cm2) in 1997 to 25nm (0.01–0.15/cm2) in 2011, an era of the most challenging cleaning applications in semiconductor manufacturing is upon us [1. Megasonic cleaning is a widely used non-contact cleaning technique. In megasonic cleaning, wafers are immersed in a cleaning liquid medium to which sonic energy is applied. High intensity sound waves generate pressure fluctuations and acoustic streaming which detach the particles from the surface and remove them. Busnaina et al [2–3 studied megasonic particle removal and the effect of acoustic streaming on the cleaning process especially in post-CMP applications. It is important to know the advantage and the limitation of megasonic cleaning technique in nano-scale particles removal.

Post-CMP Megasonic Cleaning Using Dilute SCI Solution

1999 ◽  
Vol 566 ◽  
Author(s):  
A. A. Busnaina ◽  
N. Moumen ◽  
J. Piboontum ◽  
M. Guarrera
Keyword(s):  
High Frequency ◽  
Semiconductor Manufacturing ◽  
Acoustic Streaming ◽  
Wafer Surface ◽  
Particle Removal ◽  
Optimum Conditions ◽  
Small Particles ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
Thermal Oxide

Non contact cleaning or wet-cleaning processes, were the megasonic play a key role in the separation of the particles from the wafer is a commonly used technique in semiconductor manufacturing. CMP process can be very damaging to the production yield if not followed by an effective post clean process. McQueen identified the effect of the acoustic boundary layer and its role in the removal of small particles at high frequency. Busnaina et alt studied ultrasonic and megasonic particle removal and the effect of acoustic streaming. They showed that the cleaning efficiency increased with power until a certain range and then decrease slightly. Busnaina et al result indicted that SCI removes more particles than DI water particularly at lower megasonic powers specially in the case were the slurry particles are deposited onto the wafer surface by dipping experiments. But they also demonstrated that it was possible to achieve 100 % removal in DI water when using the optimum conditions. This paper presents the latest results of the post-CMP megasonic cleaning process, this study is focused on the cleaning of thermal oxide silicone wafer polished using silica based slurry and cleaned using diluted SC1 (H20/H202/NH4OH: 40/2/1).

Fine Particle Removal Using High Frequency Acoustic Streaming

1997 ◽  
Author(s):  
Ahmed A. Busnaina
Keyword(s):  
Removal Efficiency ◽  
High Frequency ◽  
Acoustic Streaming ◽  
Input Power ◽  
Polystyrene Latex ◽  
Maximum Power ◽  
Solution Temperature ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Particulate Contamination

Abstract Liquid-based cleaning is extensively used in the semiconductor and other industries affected by contamination for the removal of particulate contamination. One of the widely used wet-cleaning processes is the megasonic cleaning. The megasonics term is used in industry to refer to frequencies near 1 MHZ. Megasonic cleaning techniques used today in industry were first presented by RCA scientists [1,6,7]. McQueen [4,5] identified the effect of the acoustic boundary layer and its role in the removal of small particles at high frequency. Kashkoush, Busnaina et al [8–11] studied ultrasonic and megasonic particle removal, focusing on the effects of acoustic streaming. They showed that removal percentage increased with power. Their results also indicated different removal efficiencies for polystyrene latex (PSL), silica (SiO2) and silicon nitride (Si3 N4) particles. Megasonic cleaning using SC1 and SC2 chemistry has been shown to be very effective by Syverson, et. al. [12]. They also showed that the removal efficiency increased with power up to a 150 W (maximum power available). Wang et al [13] also showed that power had the greatest influence on the removal efficiency up to a maximum power available (150 W). These results are consistent with what was observed by Kashkoush, Busnaina and Gale [12,13]. However, Gale and Busnaina [14–17], using higher power megasonics up to 800 W, showed that the highest removal efficiency occurs at an optimum power (500–600 W) above which it decreases slightly. They also showed that megasonic input power has the greatest influence on particle removal efficiency as compared to solution temperature, both in water and in SC1 solution. They also showed that SC1 removes particles more efficiently than DI water, particularly at lower megasonic powers. But they also showed that it was still possible to achieve 100% removal in DI water under the proper conditions.

Slurry Residue Removal in Post Chemical Mechanical Polishing

1999 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Naim Moumen
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Operating Conditions ◽  
Cleaning Process ◽  
Megasonic Cleaning ◽  
Residue Removal ◽  
Particulate Contamination

Abstract The megasonic cleaning process proved to be an essential process in cleaning silicon wafers after processes such as pre-oxidation, pre-CVD, pre-EPI, post-ASH and lately post-CMP. Current post-CMP cleans are contact cleaning techniques. These contact techniques have a low throughput and may cause wafer scratching. In addition, in contact cleaning, brush shedding which occurs under many operating conditions causes additional particulate contamination. There is a need for an effective post-CMP cleaning process. Megasonic cleaning provides the best alternative or compliment to brush clean.

Evaluation of Megasonic Cleaning for Sub-90nm Technologies

2005 ◽  
Vol 103-104 ◽  
pp. 141-146 ◽  
Author(s):  
Guy Vereecke ◽  
Frank Holsteyns ◽  
Sophia Arnauts ◽  
S. Beckx ◽  
P. Jaenen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Mass Balance ◽  
Semiconductor Manufacturing ◽  
Particle Removal ◽  
Dissolved Gas ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
High Particle ◽  
The Cost

Cleaning of nanoparticles (< 50nm ) is becoming a major challenge in semiconductor manufacturing and the future use of traditional methods, such as megasonic cleaning, is questioned. In this paper the capability of megasonic cleaning to remove nanoparticles without inflicting damage to fragile structures is investigated. The role of dissolved gas in cleaning efficiency indicates that cavitation is the main cleaning mechanism. Consequently gas mass-balance analyses are needed to optimize the performance of cleaning tools. When gas is dissolved in the cleaning present tools can remove nanoparticles down to about 30 nm using dilute chemistries at low temperature. Ultimate performance is limited by cleaning uniformity, which depends on tool design and operation. However no tool reached the target of high particle removal efficiency andlow damage. Significantly lower damage could only be obtained by decreasing the power, at the cost of a lower cleaning efficiency for nanoparticles. The development of damage-free megasonic is discussed.

The Influence of the Angle of Incidence in Megasonic Cleaning

2012 ◽  
Vol 187 ◽  
pp. 163-166 ◽  
Author(s):  
Steven Brems ◽  
Marc Hauptmann ◽  
Elisabeth Camerotto ◽  
Xiu Mei Xu ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Acoustic Waves ◽  
Angle Of Incidence ◽  
Particle Removal ◽  
Cleaning Process ◽  
Acoustic Transmission ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
Schlichting Streaming ◽  
Si Wafer

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.

Ultrafine Particle Removal in the Wafer Cleaning Process Using an Aqueous Solution with a High Concentration of Dissolved O3 and HF

2021 ◽  
Vol 314 ◽  
pp. 214-217
Author(s):  
Hyeon Joon Han ◽  
Hunhee Lee ◽  
Charles Kim ◽  
Yongmok Kim ◽  
Jinok Moon ◽  
...  
Keyword(s):  
Hydrofluoric Acid ◽  
Semiconductor Manufacturing ◽  
Ultrafine Particle ◽  
High Reactivity ◽  
High Impact ◽  
Manufacturing Processes ◽  
Particle Removal ◽  
Cleaning Process ◽  
High Concentration ◽  
Wafer Cleaning

Sulfuric Peroxide Mixture (SPM, H2SO4 + H2O2) has been widely used in semiconductor manufacturing processes due to its high reactivity and attractive price. However, SPM releases SO42- ions that can be high impact on the environmental contaminations. Therefore, the SPM process requires a high cost wastewater treatment. So, the development of alternative chemicals has been becoming an important task in the semiconductor manufacturing process. In this paper, we evaluated the feasibility of replacing SPM with dissolved ozone water (DIO3) in the wafer cleaning process, and confirmed that the Particle removal efficiency (PRE) was improved around 68% by mixing with diluted hydrofluoric acid (DHF). And, the PRE was also increased when the concentration of ozone in dissolved ozone water increased. Additionally the PRE was improved up to 98% by combining physical cleaning after O3 process.

SUBMICRON PARTICLE REMOVAL USING ULTRASONIC CLEANING

1993 ◽  
Vol 11 (1-2) ◽  
pp. 11-24 ◽  
Author(s):  
ISMAIL KASHKOUSH ◽  
AHMBD BUSNAINA
Keyword(s):  
Particle Removal ◽  
Submicron Particle ◽  
Ultrasonic Cleaning

New Chemical Vapor Delivery Systems for Surface Cleaning

2012 ◽  
Vol 195 ◽  
pp. 25-29
Author(s):  
Dan Alvarez Jr ◽  
Jeff Spiegelman ◽  
Ed Heinlein ◽  
Chris Ramos ◽  
Russell J. Holmes ◽  
...  
Keyword(s):  
Semiconductor Manufacturing ◽  
Chemical Vapor ◽  
Delivery Systems ◽  
Surface Cleaning ◽  
Particle Sizes ◽  
Particle Removal ◽  
Submicron Particle ◽  
Strong Force ◽  
Line Widths ◽  
Cleaning Methods

Conventional aqueous wet cleaning methods in semiconductor manufacturing are facing tremendous challenges, with decreasing line widths and high aspects ratio features on the order of a few nanometers. Water and other liquids have surface tensions that frequently prevent complete penetration into nanometer-sized trenches and vias now being fabricated on semiconductor wafers and other substrates. This problem is accentuated by the fact that particle sizes leading to Killer defects are now on the order of 10 nm or less. Nanometer-sized particles can adhere to a surface with a relatively strong force of over a million times its weight. An effective cleaning technique for submicron particle removal will require complete penetration of the device features to surround and dislodge particles, but at the same time not damage the features or etch the surface.

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