Optical and structural properties of AlN thin films deposited on different faces of sapphire substrates

Author(s):  
Yin Junhua ◽  
Bangdi Zhou ◽  
Liang Li ◽  
Yao Liu ◽  
Wei Guo ◽  
...  
2011 ◽  
Vol 326 (1) ◽  
pp. 9-13 ◽  
Author(s):  
Se-Yun Kim ◽  
Sang-Yun Sung ◽  
Kwang-Min Jo ◽  
Joon-Hyung Lee ◽  
Jeong-Joo Kim ◽  
...  

2005 ◽  
Vol 892 ◽  
Author(s):  
Jayantha Senawiratne ◽  
Martin Strassburg ◽  
Adam Payne ◽  
Ali Asghar ◽  
William Fenwick ◽  
...  

AbstractOptical and structural properties of in situ Cu doped GaN thin films grown on sapphire substrates were optically investigated by means of Raman, photoluminescence (PL), and absorption spectroscopy. Different Cu concentrations in the films were analyzed by secondary ion mass spectroscopy (SIMS) and found to vary from 2×1016cm-3to 5×1017cm-3. Raman studies confirmed high crystalline quality of GaN:Cu with no major structural damages due to Cu incorporation. PL investigation revealed that the origin of the emission around 2.4 eV is most likely due to Cu incorporation. The electrical conductivity of the samples was analyzed by Hall measurements and the found semi-insulating behavior was assigned to the compensation of intrinsic donors by the deep Cu acceptor states.


2000 ◽  
Author(s):  
Jochen Aderhold ◽  
V. Y. Davydov ◽  
F. Fedler ◽  
Harald Klausing ◽  
David Mistele ◽  
...  

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  

2015 ◽  
Vol 61 ◽  
pp. 26-31 ◽  
Author(s):  
E.B. Araújo ◽  
B.O. Nahime ◽  
M. Melo ◽  
F. Dinelli ◽  
F. Tantussi ◽  
...  

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