Ridge-channel AlGaN/GaN normally-off high-electron mobility transistor based on epitaxial lateral overgrowth
1998 ◽
Vol 31
(2)
◽
pp. 159-164
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2006 ◽
Vol 45
(No. 35)
◽
pp. L932-L934
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2004 ◽
Vol 43
(12)
◽
pp. 8019-8023
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1990 ◽
Vol 8
(6)
◽
pp. 1339
◽