Coexistence of volatile and non-volatile resistive switching in Ni/SiO2/Pt memristor device controlled from different current compliances

In this work, we fabricated a Pt/SiN/TaN memristor device and characterized its resistive switching by controlling the compliance current and switching polarity. The chemical and material properties of SiN and TaN were investigated by X-ray photoelectron spectroscopy. Compared with the case of a high compliance current (5 mA), the resistive switching was more gradual in the set and reset processes when a low compliance current (1 mA) was applied by DC sweep and pulse train. In particular, low-power resistive switching was demonstrated in the first reset process, and was achieved by employing the negative differential resistance effect. Furthermore, conductance quantization was observed in the reset process upon decreasing the DC sweep speed. These results have the potential for multilevel cell (MLC) operation. Additionally, the conduction mechanism of the memristor device was investigated by I-V fitting.

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Detail specification for silicon coaxial resistive switching diode

10.3403/00149138 ◽

1971 ◽

Cited By ~ 1

Keyword(s):

Resistive Switching

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Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2012.00323 ◽

2012 ◽

Vol 27 (3) ◽

pp. 323-326

Author(s):

Zhen-Guo JI ◽

Jun-Jie WANG ◽

Qi-Nan MAO ◽

Jun-Hua XI

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Switching Characteristics

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Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

Nanoscience &Nanotechnology-Asia ◽

10.2174/2210681208666180628122146 ◽

2019 ◽

Vol 9 (4) ◽

pp. 486-493 ◽

Cited By ~ 1

Author(s):

S. Sahoo ◽

P. Manoravi ◽

S.R.S. Prabaharan

Keyword(s):

Resistive Switching ◽

Bottom Electrode ◽

Rf Sputtering ◽

Hysteresis Curve ◽

Bipolar Switching ◽

Post Annealing ◽

Endurance Tests ◽

Bilayer Device ◽

Switching Characteristics ◽

Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

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A versatile multifaceted resistive switching memory activated by light and ion irradiation in poly (3-octylthiophene)-zinc oxide hybrids

Organic Electronics ◽

10.1016/j.orgel.2020.105932 ◽

2020 ◽

Vol 87 ◽

pp. 105932 ◽

Cited By ~ 1

Author(s):

Jitendra Singh ◽

R.G. Singh ◽

Subodh K. Gautam ◽

Himanshi Gupta ◽

Fouran Singh

Keyword(s):

Zinc Oxide ◽

Resistive Switching ◽

Ion Irradiation ◽

Resistive Switching Memory ◽

Switching Memory

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Investigation of resistive switching in gallium oxide nanostructures formed by local anodic oxidation

Journal of Physics Conference Series ◽

10.1088/1742-6596/1410/1/012233 ◽

2019 ◽

Vol 1410 ◽

pp. 012233 ◽

Cited By ~ 1

Author(s):

R V Tominov ◽

N A Polupanov ◽

V I Avilov ◽

M S Solodovnik ◽

N V Parshina ◽

...

Keyword(s):

Anodic Oxidation ◽

Resistive Switching ◽

Gallium Oxide ◽

Oxide Nanostructures ◽

Local Anodic Oxidation

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Bipolar Resistive Switching in the Ag/Sb2Te3/Pt Heterojunction

ACS Applied Electronic Materials ◽

10.1021/acsaelm.1c00341 ◽

2021 ◽

Author(s):

Zhenhua Wu ◽

Yinxiao Feng ◽

Yan Liu ◽

Huilie Shi ◽

Shuai Zhang ◽

...

Keyword(s):

Resistive Switching ◽

Bipolar Resistive Switching

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Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽

10.1039/d0ra05209d ◽

2020 ◽

Vol 10 (69) ◽

pp. 42249-42255

Author(s):

Xiaohan Wu ◽

Ruijing Ge ◽

Yifu Huang ◽

Deji Akinwande ◽

Jack C. Lee

Keyword(s):

Resistive Switching ◽

Constant Voltage ◽

Switching Device ◽

Current Stress ◽

Electric Stress ◽

State Evolution ◽

Conductive Bridge ◽

Resistance State ◽

Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

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