scholarly journals Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cell

Metals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1918
Author(s):  
Jongmin Park ◽  
Seungwook Lee ◽  
Kisong Lee ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Pulse Train ◽  
Conduction Mechanism ◽  
Differential Resistance ◽  
X Ray ◽  
Conductance Quantization ◽  
Negative Differential Resistance Effect ◽  
Memristor Device ◽  
Sweep Speed

In this work, we fabricated a Pt/SiN/TaN memristor device and characterized its resistive switching by controlling the compliance current and switching polarity. The chemical and material properties of SiN and TaN were investigated by X-ray photoelectron spectroscopy. Compared with the case of a high compliance current (5 mA), the resistive switching was more gradual in the set and reset processes when a low compliance current (1 mA) was applied by DC sweep and pulse train. In particular, low-power resistive switching was demonstrated in the first reset process, and was achieved by employing the negative differential resistance effect. Furthermore, conductance quantization was observed in the reset process upon decreasing the DC sweep speed. These results have the potential for multilevel cell (MLC) operation. Additionally, the conduction mechanism of the memristor device was investigated by I-V fitting.

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

scholarly journals Resistive switching in a LaMnO3 + δ/TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy

2019 ◽  
Vol 126 (22) ◽  
pp. 225302 ◽  
Author(s):  
Benjamin Meunier ◽  
Eugénie Martinez ◽  
Raquel Rodriguez-Lamas ◽  
Dolors Pla ◽  
Mònica Burriel ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Memory Cell ◽  
X Ray

WOx resistive memory elements for scaled Flash memories

2011 ◽  
Vol 1337 ◽  
Author(s):  
S. Gorji Ghalamestani ◽  
L. Goux ◽  
D.E. Díaz-Droguett ◽  
D. Wouters ◽  
J. G. Lisoni
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Time Windows ◽  
Electrical Measurement ◽  
Thin Layers ◽  
Switching Behavior ◽  
Elastic Recoil ◽  
X Ray ◽  
Bipolar Switching ◽  
Switching Characteristics

ABSTRACTWe investigated the resistive switching behavior of WOx films. WOx was obtained from the thermal oxidation of W thin layers. The parameters under investigation were the influence of the temperature (450-500 °C) and time (30-220 s) used to obtain the WOx on the resistive switching characteristics of Si\W\WOx\Metal_electrode ReRAM cells. The metal top electrodes (TE) tested were Pt, Ni, Cu and Au. The elemental composition and microstructure of the samples were characterized by means of elastic recoil detection analysis (ERD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR).Electrical measurement of the WOx-based memory elements revealed bipolar and unipolar switching and this depended upon the oxidation conditions and TE selected. Indeed, switching events were observed in WOx samples obtained either at 450 °C or 500 °C in time windows of 180-200 s and 30-60 s, respectively. Pt and Au TE promoted bipolar switching while unipolar behavior was observed with Ni TE only; no switching events were observed with Cu TE. Good switching characteristics seems not related to the overall thickness, crystallinity and composition of the oxide, but on the W6+/W5+ ratio present on the WOx surface, surface in contact with the TE material. Interestingly, W6+/W5+ ratio can be tuned through the oxidation conditions, showing a path for optimizing the properties of the WOx-based ReRAM cells.

scholarly journals Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1124 ◽  
Author(s):  
Chao-Feng Liu ◽  
Xin-Gui Tang ◽  
Lun-Quan Wang ◽  
Hui Tang ◽  
Yan-Ping Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Random Access ◽  
High Resistance State ◽  
X Ray ◽  
Low Resistance ◽  
Sol Gel Process ◽  
Resistance State

The resistive switching (RS) characteristics of flexible films deposited on mica substrates have rarely been reported upon, especially flexible HfO2 films. A novel flexible Au/HfO2/Pt/mica resistive random access memory device was prepared by a sol-gel process, and a Au/HfO2/Pt/Ti/SiO2/Si (100) device was also prepared for comparison. The HfO2 thin films were grown into the monoclinic phase by the proper annealing process at 700 °C, demonstrated by grazing-incidence X-ray diffraction patterns. The ratio of high/low resistance (off/on) reached 1000 and 50 for the two devices, respectively, being relatively stable for the former but not for the latter. The great difference in ratios for the two devices may have been caused by different concentrations of the oxygen defect obtained by the X-ray photoelectron spectroscopy spectra indicating composition and chemical state of the HfO2 thin films. The conduction mechanism was dominated by Ohm’s law in the low resistance state, while in high resistance state, Ohmic conduction, space charge limited conduction (SCLC), and trap-filled SCLC conducted together.

scholarly journals Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 2055 ◽  
Author(s):  
Hojeong Ryu ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
High Resistance ◽  
Differential Resistance ◽  
Forming Process ◽  
Short Term Plasticity ◽  
Low Resistance ◽  
Current Decay ◽  
Operation Conditions ◽  
Setting Process ◽  
Negative Differential Resistance Effect

In this work, we propose three types of resistive switching behaviors by controlling operation conditions. We confirmed well-known filamentary switching in Al2O3-based resistive switching memory using the conventional device working operation with a forming process. Here, filamentary switching can be classified into two types depending on the compliance current. On top of that, the homogeneous switching is obtained by using a negative differential resistance effect before the forming or setting process in a negative bias. The variations of the low-resistance and high-resistance states in the homogeneous switching are comparable to the filamentary switching cases. However, the drift characteristics of the low-resistance and high-resistance states in the homogeneous switching are unstable with time. Therefore, the short-term plasticity effects, such as the current decay in repeated pulses and paired pulses facilitation, are demonstrated when using the resistance drift characteristics. Finally, the conductance can be increased and decreased by 50 consecutive potentiation pulses and 50 consecutive depression pulses, respectively. The linear conductance update in homogeneous switching is achieved compared to the filamentary switching, which ensures the high pattern-recognition accuracy.

In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

2012 ◽  
Vol 101 (14) ◽  
pp. 143501 ◽  
Author(s):  
Thomas Bertaud ◽  
Malgorzata Sowinska ◽  
Damian Walczyk ◽  
Sebastian Thiess ◽  
Andrei Gloskovskii ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Destructive Analysis ◽  
In Operando ◽  
Non Destructive

Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

2017 ◽  
Vol 19 (19) ◽  
pp. 11864-11868 ◽  
Author(s):  
L. J. Wei ◽  
Y. Yuan ◽  
J. Wang ◽  
H. Q. Tu ◽  
Y. Gao ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Si Substrate ◽  
Bipolar Resistive Switching ◽  
Switching Behaviour ◽  
Negative Differential Resistance Effect

We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment.

scholarly journals Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

2012 ◽  
Vol 100 (23) ◽  
pp. 233509 ◽  
Author(s):  
M. Sowinska ◽  
T. Bertaud ◽  
D. Walczyk ◽  
S. Thiess ◽  
M. A. Schubert ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray

scholarly journals Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1466
Author(s):  
Chiao-Fan Chiu ◽  
Sreekanth Ginnaram ◽  
Asim Senapati ◽  
Yi-Pin Chen ◽  
Siddheswar Maikap
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Stable State ◽  
Schematic Model ◽  
Bipolar Resistive Switching ◽  
Al2o3 Layer ◽  
X Ray ◽  
Resistance State ◽  
Switching Characteristics

Resistive switching characteristics by using the Al2O3 interfacial layer in an Al/Cu/GdOx/Al2O3/TiN memristor have been enhanced as compared to the Al/Cu/GdOx/TiN structure owing to the insertion of Al2O3 layer for the first time. Polycrystalline grain, chemical composition, and surface roughness of defective GdOx film have been investigated by transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and atomic force microscopy (AFM). For bipolar resistive switching (BRS) characteristics, the conduction mechanism of high resistance state (HRS) is a space-charge limited current for the Al/Cu/GdOx/TiN device while the Al/Cu/GdOx/Al2O3/TiN device shows Schottky emission. However, both devices show Ohmic at a low resistance state (LRS). After the device has been SET, the Cu filament evidences by both TEM and elemental mapping. Oxygen-rich at the Cu/GdOx interface and Al2O3 layer are confirmed by energy dispersive X-ray spectroscopy (EDS) line profile. The Al/Cu/GdOx/Al2O3/TiN memristor has lower RESET current, higher speed operation of 100 ns, long read pulse endurance of >109 cycles, good data retention, and the memristor with a large resistance ratio of >105 is operated at a low current of 1.5 µA. The complementary resistive switching (CRS) characteristics of the Al/Cu/GdOx/Al2O3/TiN memristor show also a low current operation as compared to the Al/Cu/GdOx/TiN device (300 µA vs. 3.1 mA). The transport mechanism is the Cu ion migration and it shows Ohmic at low field and hopping at high field regions. A larger hopping distance of 1.82 nm at the Cu/GdOx interface is obtained as compared to a hopping distance of 1.14 nm in the Al2O3 layer owing to a larger Cu filament length at the Cu/GdOx interface than the Al2O3 layer. Similarly, the CRS mechanism is explained by using the schematic model. The CRS characteristics show a stable state with long endurance of >1000 cycles at a pulse width of 1 µs owing to the insertion of Al2O3 interfacial layer in the Al/Cu/GdOx/Al2O3/TiN structure.

Sign in / Sign up

Export Citation Format

Share Document