Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cell

In this work, we fabricated a Pt/SiN/TaN memristor device and characterized its resistive switching by controlling the compliance current and switching polarity. The chemical and material properties of SiN and TaN were investigated by X-ray photoelectron spectroscopy. Compared with the case of a high compliance current (5 mA), the resistive switching was more gradual in the set and reset processes when a low compliance current (1 mA) was applied by DC sweep and pulse train. In particular, low-power resistive switching was demonstrated in the first reset process, and was achieved by employing the negative differential resistance effect. Furthermore, conductance quantization was observed in the reset process upon decreasing the DC sweep speed. These results have the potential for multilevel cell (MLC) operation. Additionally, the conduction mechanism of the memristor device was investigated by I-V fitting.

Nonadiabatic nonlinear optics and quantum geometry — Application to the twisted Schwinger effect

We study the tunneling mechanism of nonlinear optical processes in solids induced by strong coherent laser fields. The theory is based on an extension of the Landau-Zener model with nonadiabatic geometric effects. In addition to the rectification effect known previously, we find two effects, namely perfect tunneling and counterdiabaticity at fast sweep speed. We apply this theory to the twisted Schwinger effect, i.e., nonadiabatic pair production of particles by rotating electric fields, and find a nonperturbative generation mechanism of the opto-valley polarization and photo-current in Dirac and Weyl fermions.

Fabrication of Ni–Co–P Alloy Coatings Using Jet Electrodeposition with Varying Reciprocating Sweep Speeds and Jet Gaps to Improve Wear and Seawater Corrosion Resistance

Type 45 steel substrate surfaces were coated with Ni–Co–P alloy coatings using jet electrodeposition in varying reciprocating sweep speed and jet gap to improve the wear and seawater polarization resistance of the substrate surface. The properties of the deposited coatings were analyzed and characterized. The results showed that the morphologies of the cross-section, thickness, and chemical composition of coatings were affected by reciprocating sweep speed and jet gap variation. At a reciprocating sweep speed of 175 mm·s−1 coupled with a jet gap of 2.0 mm, the content of Co element in the deposit attained the highest value of 47.66 wt.%. Reciprocating sweep speed and jet gap variation exhibited no significant influence on either the phase structure or the peak intensities of deposited Ni–Co–P coatings, but an obvious preferred orientation was evident in the (111) plane. Further increase in reciprocating sweep speed and jet gap caused an initial increase in the microhardness of Ni–Co–P alloy coatings followed by a decrease, where the highest value attained was 635 HV0.1. At a jet gap of 2.0 mm and a reciprocating sweep speed of 175 mm·s−1, Ni–Co–P alloy coatings reached a minimum wear scar width value of 460 µm. Electrochemical tests showed that the seawater corrosion resistance of coatings exhibited an observable change with increased reciprocating sweep speed and jet gap. The Ni–Co–P alloy coatings exhibited the highest polarization resistance (Rp) of 28.32 kΩ·cm−2 when the reciprocating sweep speed was 175 mm·s−1 and the jet gap was 2.0 mm, which indicated that the coatings had better seawater corrosion resistance.

Electrochemical Behavior and Convoluted Voltammetry of Carbon Nanotubes Modified with Anthraquinone

The validity of convolution voltammetry for determination accurate values of diffusion coefficient (D) and electrons number (n) consumed in electrochemical reaction has been explained by applying the technique to a carbon nanotubes chemically modified using func-tional groups of anthraquinone(AQ). The analysis with macrodisk electrode was facilitated due to the presence of minor contribution of nonfaradaic current, so moderate values of sweep speed can be used without subtraction of residual current to quantify the diffusivity of electro-active species.The values of D and nCb were determined simultaneously and demonstrated using convoluted procedure. The ob-tained results indicate that the convolution voltammetry provides advantages over constant state methods (plateau) such as micro-disk electrode voltammetry and rotating disk electrode voltammetry, as it is not limited by the method of diffusion (planar or radial), which remove the limitations of solvent viscosity, geometry of electrode, and voltammetric sweep speed.

Tuning Characteristics of DFB Diode Laser and its Application to TDLAS Gas Sensor Design

Static and dynamic tuning characteristics of Distribute Feedback (DFB) diode lasers are investigated with practical laser devices. These characteristics are the basic guidelines for practical TDLAS sensors design. Static tuning characteristics help to select suitable diode lasers from limited available laser devices with specific wavelength and to set an appropriate working current and temperature. Dynamic tuning characteristics decide the sweep speed of current slope in both direct absorb Spectroscopy (DAS) and wavelength modulation Spectroscopy (WMS). Because of nonlinearity in the relation between wavelength and tuning current, the measured spectral line position should be corrected by the dynamic characteristics. For WMS, current tuning efficient and IM/AM (Intense modulation/Amplitude modulation) differential phase could be utilized to optimize laser modulation and harmonic components demodulation.

Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure

We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the sweep speed dependence of electron injection energy with a numerical calculation based on our collective tunneling model, that we developed to emulate the experiment in this system, and obtained a new insight into the origin of sweep speed dependence. We revealed that our model can reproduce the sweep speed dependence of electron tunneling. This insight is useful for designing future nano-electronic devices.