A three-bit-per-cell via-type resistive-random-access-memory gated metal-oxide-semiconductor-field-effect-transistor non-volatile-memory (vRG-MOSFET NVM) with the FORMing-free characteristic
2010 ◽
Vol 49
(4)
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pp. 040209
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2012 ◽
Vol 51
(2)
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pp. 02BD03
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2010 ◽
Vol 49
(10)
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pp. 104202
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1996 ◽
Vol 35
(Part 1, No. 2B)
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pp. 865-868
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2019 ◽
Vol 19
(10)
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pp. 6023-6030
2013 ◽
Vol 52
(4S)
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pp. 04CE08
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2020 ◽
Vol 20
(11)
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pp. 6596-6602
2021 ◽