A mechanism for spin electron acoustic soliton observed in a spin polarized nanosized electron-hole plasma

2021 ◽  
Author(s):  
Mahmoud Saad Afify ◽  
Zafar Iqbal ◽  
Ghulam Murtaza
Keyword(s):  
Maxwell Equations ◽  
Kdv Equation ◽  
Reductive Perturbation Method ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Spin Polarized ◽  
Qhd Model ◽  
Quantum Hydrodynamic ◽  
Electron Acoustic

Abstract The formation and the characteristics of spin electron acoustic (SEA) soliton in a beam interacting spin polarized electron-hole plasma are investigated. These wavepackets are supposed to be the source of heating during the excitation process. We have used the separate spin evolution-quantum hydrodynamic (SSE-QHD) model along with Maxwell equations and derived the Korteweg-de Vries (KdV) equation by using the reductive perturbation method (RPM). We note that the larger values of beam density and spin polarization can change the soliton nature from rarefactive to compressive. Our findings may be important to understand the characteristics of localized spin dependent nonlinear waves in nanosized semiconductor devices.

Subpicosecond dynamical renormalization of spin-polarized electron–hole plasma in Cd1−xMnxTe

2004 ◽  
Vol 21 (2-4) ◽  
pp. 1022-1026 ◽  
Author(s):  
Z.H Chen ◽  
H Sakurai ◽  
T Tomita ◽  
K Kayanuma ◽  
A Murayama ◽  
...  
Keyword(s):  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Spin Polarized

High field domain in electron–hole plasma of germanium

1973 ◽  
Vol 15 (2) ◽  
pp. 711-720 ◽  
Author(s):  
V. N. Dobrovolskii ◽  
M. N. Vinoslavskii ◽  
O. S. Zinets
Keyword(s):  
High Field ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma

Instability of the electron-hole plasma in covalent semiconductors

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1014-1016
Author(s):  
M. Combescot ◽  
J. Bok
Keyword(s):  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma

scholarly journals Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN

1997 ◽  
Vol 2 ◽  
Author(s):  
J.-Chr. Holst ◽  
L. Eckey ◽  
A. Hoffmann ◽  
I. Broser ◽  
H. Amano ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Blue Laser ◽  
Basic Material ◽  
Organic Chemical ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Wide Range ◽  
Gain Spectra ◽  
Excitation Processes

High-excitation processes like biexciton decay and recombination of an electron-hole-plasma are discussed as efficient mechanisms for lasing in blue laser diodes [1]. Therefore, the investigation of these processes is of fundamental importance to the understanding of the properties of GaN as a basic material for optoelectronical applications. We report on comprehensive photoluminescence and gain measurements of highly excited GaN epilayers grown by metal-organic chemical vapor deposition (MOCVD) over a wide range of excitation densities and temperatures. For low temperatures the decay of biexcitons and the electron-hole-plasma dominate the spontaneous-emission and gain spectra. A spectral analysis of the lineshape of these emissions is performed and the properties of the biexciton and the electron-hole-plasma in GaN will be disscused in comparison to other wide-gap materials. At increased temperatures up to 300 K exciton-exciton-scattering and band-to-band recombination are the most efficient processes in the gain spectra beside the electron-hole-plasma.

Sign in / Sign up

Export Citation Format

Share Document