The synergies between displacement damage creation and hydrogen presence: the effect of D ion energy and flux

2022 ◽  
Author(s):  
Sabina Markelj ◽  
Matic Pečovnik ◽  
Thomas Schwarz-Selinger ◽  
Mitja Kelemen
Keyword(s):  
Nuclear Reaction ◽  
Thermal Desorption ◽  
Rate Equation ◽  
Irradiation Time ◽  
Thermal Desorption Spectroscopy ◽  
Nuclear Reaction Analysis ◽  
Displacement Damage ◽  
Ion Energy ◽  
Depth Profiles ◽  
Different Temperatures

Abstract In this work the synergism between displacement damage creation and presence of hydrogen isotopes was studied. Tungsten samples were irradiated by 10.8 MeV W ions with or without the presence of D ions with two different energies of 300 eV/D and 1000 eV/D and different temperatures. In order to compare the results obtained with different exposure parameters the samples were afterwards additionally exposed to D ions at 450 K to populate the created defects. By increasing the W irradiation time, ion flux and energy, the increase of D concentration and D retention was observed as measured by nuclear reaction analysis and thermal desorption spectroscopy. By fitting the D depth profiles and D desorption spectra by the rate equation code MHIMS-R we could see that additional fill-levels were populated with higher flux and ion energy which ends up in higher final D concentration and retention as compared to experiments with lower D flux and energy.

Helium Behaviour in Fe-Base Materials: Thermal Desorption and Nuclear Reaction Analyses

2012 ◽  
Vol 323-325 ◽  
pp. 221-226 ◽  
Author(s):  
Hélène Lefaix-Jeuland ◽  
Sandrine Miro ◽  
Fabrice Legendre
Keyword(s):  
Nuclear Reaction ◽  
Thermal Desorption ◽  
Depth Profiling ◽  
Bulk Diffusion ◽  
Thermal Desorption Spectroscopy ◽  
Reaction Model ◽  
Nuclear Reaction Analysis ◽  
Helium Bubbles ◽  
Base Materials ◽  
Complementary Set

Polycrystalline Fe 99.95 and 99.5 samples were implanted with helium at 8 keV and 3 MeV. Thermal Desorption Spectroscopy (TDS) and Nuclear Reaction Analysis (NRA) provided a complementary set of techniques to characterize helium-materials interactions within two different implantation depths, respectively close to the surface and in the bulk. Using TDS, it was possible to get information about the nature and the states of the structures where helium was trapped in radiation damaged Fe specimens. Activation energies for every trapping site (mono-vacancies, clusters) have been determined from conventional reaction model. The effect of interstitial carbon was also discussed, and compared with previous ab-initio studies. Moreover, the helium bulk diffusion constants in radiation damaged structures could be derived from non destructive 3He depth profiling. Preliminary observations highlighted that a few part of He remained trapped while helium bubbles migrated in the bulk.

Parameters for Nitrogen Diffusion in Ni, Ti, and Al Obtained from Implanted Bilayers

1992 ◽  
Vol 279 ◽  
Author(s):  
K. K. Bourdelle ◽  
D. O. Boerma
Keyword(s):  
Nuclear Reaction ◽  
Room Temperature ◽  
Vacuum Annealing ◽  
Nitride Layer ◽  
Nuclear Reaction Analysis ◽  
Nitrogen Diffusion ◽  
Depth Profiles ◽  
Solid Interface ◽  
Before And After ◽  
Concentration Depth Profiles

ABSTRACTNi foils and samples consisting of bilayers of Ni or Fe on Al, Ti or Si were implanted at room temperature with 15N+ ions to fluences of around 1×l017 N/cm2. The concentration depth profiles of 15N were determined with nuclear reaction analysis before and after vacuum annealing. It was found that the penetrability for N atoms of the surface and the solid/solid interface plays an important role in the N redistribution during implantation or annealing. The formation of a nitride layer or nitride clusters in Ni and Fe was deduced. Parameters for N migration determined for the metals under investigation are discussed in terms of models.

Helium Migration Mechanisms in Polycrystalline Uranium Dioxide

2006 ◽  
Vol 985 ◽  
Author(s):  
Guillaume Martin ◽  
Pierre Desgardin ◽  
Philippe Garcia ◽  
Thierry Sauvage ◽  
Gaëlle Carlot ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Nuclear Reaction ◽  
Uranium Dioxide ◽  
Nuclear Reaction Analysis ◽  
Annealing Stage ◽  
Depth Profiles ◽  
Release Mechanisms ◽  
Helium Diffusion

AbstractThis study aims at identifying the release mechanisms of helium in uranium dioxide. Two sets of polycrystalline UO2 sintered samples presenting different microstructures were implanted with 3He ions at concentrations in the region of 0.1 at.%. Changes in helium concentrations were monitored using two Nuclear Reaction Analysis (NRA) techniques based on the 3He(d,α)1H reaction. 3He release is measured in-situ during sample annealing at temperatures ranging between 700°C and 1000°C. Accurate helium depth profiles are generated after each annealing stage. Results that provide data for further understanding helium release mechanisms are discussed. It is found that helium diffusion appears to be enhanced above 900°C in the vicinity of grain boundaries possibly as a result of the presence of defects.

Study of the Hydrogen Traps in a High Strength TRIP Steel by Thermal Desorption Spectroscopy

2012 ◽  
Vol 706-709 ◽  
pp. 2253-2258 ◽  
Author(s):  
Diana Pérez Escobar ◽  
Lode Duprez ◽  
Kim Verbeken ◽  
Marc Verhaege
Keyword(s):  
Grain Boundaries ◽  
Thermal Desorption ◽  
Trip Steel ◽  
Cold Deformation ◽  
Thermal Desorption Spectroscopy ◽  
High Strength ◽  
Trip Steels ◽  
Depth Study ◽  
Different Temperatures ◽  
Steel Trip700

Thermal desorption spectroscopy (TDS) is a very important tool in hydrogen related research. It allows to distinguish between the different types of microstructural hydrogen traps based on the analysis of the different temperatures at which hydrogen desorbs from the material during heating. These peak temperatures depend on the metallurgical and microstructural characteristics of the steel under investigation and provide important information on the possible mechanisms for hydrogen embrittlement (HE). In the present work, multiple TDS experiments and an in-depth study of the microstructure were performed on a TRIP steel (TRIP700) that was previously cold deformed in order to make a correlation between the microstructural features of this material, e.g. grain boundaries, dislocations, martensite formation and the peaks that became visible during TDS. The results obtained for the TRIP grade were compared with those obtained for electrolytic pure iron, which only contained a limited amount of possible trap sites such as grain boundaries and an increasing amount of dislocations due to previous application of cold deformation. Significant differences between both materials and a significant impact of the degree of cold deformation for TRIP steels were observed.

scholarly journals Thermal Effect on the Structural, Electrical, and Optical Properties of In-Line Sputtered Aluminum Doped Zinc Oxide Films Explored with Thermal Desorption Spectroscopy

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Shang-Chou Chang ◽  
Tien-Chai Lin ◽  
To-Sing Li
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Thermal Effect ◽  
Thermal Desorption ◽  
Thermal Desorption Spectroscopy ◽  
Optical Transmittance ◽  
Device Fabrication ◽  
Electrical And Optical Properties ◽  
Different Temperatures ◽  
Aluminum Doped Zinc Oxide

This work investigates the thermal effect on the structural, electrical, and optical properties of aluminum doped zinc oxide (AZO) films. The AZO films deposited at different temperatures were measured using a thermal desorption system to obtain their corresponding thermal desorption spectroscopy (TDS). In addition to obtaining information of thermal desorption, the measurement of TDS also has the effect of vacuum annealing on the AZO films. The results of measuring TDS imply part of the doped aluminum atoms do not stay at substituted zinc sites in AZO films. The (002) preferential direction of the AZO films in X-ray diffraction spectra shifts to a lower angle after measurement of TDS. The grain size grows and surface becomes denser for all AZO films after measurement of TDS. The carrier concentration, mobility, and average optical transmittance increase while the electrical resistivity decreases for AZO films after measurement of TDS. These results indicate that the AZO films deposited at 200°C are appropriate selections if the AZO films are applied in device fabrication of heat-produced process.

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