On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board

Abstract Characteristics of a compact III–V optocoupler heterogeneously integrated on a silicon substrate and formed by a 31 µm in diameter microdisk (MD) laser with a closely-spaced 50 µm × 200 µm waveguide photodetector are presented. Both optoelectronic devices were fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers. The measured dark current density of the photodetector was as low as 2.1 µA cm−2. The maximum link efficiency determined as the ratio of the photodiode photocurrent increment to the increment of the microlaser bias current was 1%–1.4%. The developed heterogeneous integration of III–V devices to silicon boards by Au-Au thermocompression bonding is useful for avoiding the difficulties associated with III–V epitaxial growth on Si and facilitates integration of several devices with different active layers and waveguides. The application of MD lasers with their lateral light output is promising for simplifying requirements for optical loss at III–V/Si interface.

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Heterogeneous Integration of Boost Power Supply and On-Chip Solar Cell using triple well CMOS Process

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.138.41 ◽

2018 ◽

Vol 138 (1) ◽

pp. 41-49

Author(s):

Kazuma Igarashi ◽

Yoshimasa Minami ◽

Nobuhiko Nakano

Keyword(s):

Solar Cell ◽

Power Supply ◽

Heterogeneous Integration ◽

Cmos Process ◽

On Chip

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Packaging without the Package - A More Holistic Moore's Law

International Symposium on Microelectronics ◽

10.4071/isom-2017-slide-2 ◽

2017 ◽

Vol 2017 (S1) ◽

pp. 1-40

Author(s):

Subramanian S. Iyer (Subu)

Keyword(s):

System Integration ◽

System Level ◽

Heterogeneous Integration ◽

Power Performance ◽

Wafer Level ◽

Innovative Materials ◽

Barrier To Entry ◽

On Chip ◽

Market Consolidation ◽

Conventional Systems

Silicon features have scaled by over 1500X for over six decades, and with the adoption of innovative materials delivered better power-performance, density and till recently, cost per function, almost every generation. This has spawned a vibrant system-on-chip (SoC) approach, where progressively more function has been integrated on a single die. The integration of multiple dies on packages and boards has, however, scaled only modestly by a factor of three to five times. However, as SoCs have become bigger and more complex, the Non-Recurring Engineering (NRE) Charge and time to market have both ballooned out of control leading to ever increasing market consolidation. We need to address this problem through novel methods of system Integration. With the well-documented slowing down of scaling and the advent of the Internet of Things, there is a focus on heterogeneous integration and system-level scaling. Packaging itself is undergoing a transformation that focuses on overall system performance through integration rather than on packaging individual components. We propose ways in which this transformation can evolve to provide a significant value at the system level while providing a significantly lower barrier to entry compared with a chip-based SoC approach that is currently used. More importantly it will allow us to re-architect systems in a very significant way. This transformation is already under way with 3-D stacking of dies, Wafer level fan-out processing, and will evolve to make heterogeneous integration the backbone of a new SoC methodology, extending to integrate entire Systems on Wafers (SoWs). We will describe the technology we use and the results to-date. This has implications in redefining the memory hierarchy in conventional systems and in neuromorphic systems. We extend these concepts to flexible and biocompatible electronics.

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Epitaxial Si1-xGex Films and Superlattice Structures Grown by CVD for Infrared Photodetectors

MRS Proceedings ◽

10.1557/proc-770-i4.7 ◽

2003 ◽

Vol 770 ◽

Author(s):

L. Maddiona ◽

S. Coffa ◽

S. Lorenti ◽

C. Bongiorno

Keyword(s):

Near Infrared ◽

Chemical Vapor ◽

Local Area ◽

Strained Si ◽

Cross Sectional ◽

Active Layers ◽

Transmission Electron ◽

Photo Response ◽

Superlattice Structures ◽

On Chip

AbstractIntegration of photodetectors with high responsitivity in the near infrared (1.3-1.55 μm) on standard Si electronic circuits is important for a variety of applications in the field of on-chip, local area and long haul optical communications. In this work we report on a detailed structural and optical characterization of epitaxial Si1-xGex films and Si1-xGex /Si multilayers grown by chemical vapor deposition on (100) Si wafers. Cross-sectional transmission electron microscopy analyses show that metastable strained Si1-xGex films of few nanometer with x>40% can be deposited at low growth temperature and pressure. Absorption measurements on these films demonstrate the extension of the photo-response to 1.55 μm. Using these films as active layers Schottky integrated photodetectors have been fabricated.

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