Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes

2013 ◽  
Vol 22 (10) ◽  
pp. 106107 ◽  
Author(s):  
Cen Tang ◽  
Gang Xie ◽  
Li Zhang ◽  
Qing Guo ◽  
Tao Wang ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes ◽  
Modulation Technique ◽  
Field Modulation

Silicon-carbide high-voltage (400 V) Schottky barrier diodes

1992 ◽  
Vol 13 (10) ◽  
pp. 501-503 ◽  
Author(s):  
M. Bhatnagar ◽  
P.K. McLarty ◽  
B.J. Baliga
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

2014 ◽  
Vol 31 (6) ◽  
pp. 068502 ◽  
Author(s):  
He Kang ◽  
Quan Wang ◽  
Hong-Ling Xiao ◽  
Cui-Mei Wang ◽  
Li-Juan Jiang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances

1993 ◽  
Vol 14 (12) ◽  
pp. 548-550 ◽  
Author(s):  
T. Kimoto ◽  
T. Urushidani ◽  
S. Kobayashi ◽  
H. Matsunami
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

scholarly journals Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate

2002 ◽  
Vol 122 (5) ◽  
pp. 637-643
Author(s):  
Hidekazu Tsuchida ◽  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Isaho Kamata ◽  
Tamotsu Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
Schottky Barrier ◽  
High Voltage ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes

The guard-ring termination for the high-voltage SiC Schottky barrier diodes

1995 ◽  
Vol 16 (7) ◽  
pp. 331-332 ◽  
Author(s):  
K. Ueno ◽  
T. Urushidani ◽  
K. Hashimoto ◽  
Y. Seki
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Guard Ring ◽  
Schottky Barrier Diodes
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