Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor
Keyword(s):
2004 ◽
Vol 43
(4B)
◽
pp. 2239-2242
◽
Keyword(s):
2019 ◽
Vol 10
(1)
◽
pp. 398
2019 ◽
Vol 19
(4)
◽
pp. 2319-2322
◽
2019 ◽
Vol 19
(4)
◽
pp. 2298-2301
◽