The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells

Chinese Physics B ◽

10.1088/1674-1056/22/2/029402 ◽

2013 ◽

Vol 22 (2) ◽

pp. 029402 ◽

Author(s):

Da-Wei Li ◽

Jun-Rui Qin ◽

Shu-Ming Chen

Keyword(s):

Supply Voltage ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Single Event Upset ◽

Single Event ◽

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Recovery of single event upset in advanced complementary metal—oxide semiconductor static random access memory cells

Chinese Physics B ◽

10.1088/1674-1056/21/2/029401 ◽

2012 ◽

Vol 21 (2) ◽

pp. 029401 ◽

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bin Liang ◽

Bi-Wei Liu

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Single Event Upset ◽

Single Event ◽

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Design of experiments and integer linear programming-assisted conjugate-gradient optimisation of high-/metal-gate nano-complementary metal-oxide semiconductor static random access memory

IET Computers & Digital Techniques ◽

10.1049/iet-cdt.2011.0166 ◽

2012 ◽

Vol 6 (4) ◽

pp. 240

Author(s):

S.P. Mohanty ◽

E. Kougianos

Keyword(s):

Linear Programming ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Access Memory ◽

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An Analysis of Size Effect on the Performances of Low-Leakage 0.10 µm Complementary Metal Oxide Semiconductor for 5-GHz Band Low-Power RF-ICs and Static Random Access Memory Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.5178 ◽

2004 ◽

Vol 43 (8A) ◽

pp. 5178-5185

Author(s):

Yo-Sheng Lin

Keyword(s):

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Access Memory ◽

Low Leakage ◽

Memory Applications ◽

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Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Chinese Physics B ◽

10.1088/1674-1056/23/11/118503 ◽

2014 ◽

Vol 23 (11) ◽

pp. 118503 ◽

Author(s):

Yao Xiao ◽

Hong-Xia Guo ◽

Feng-Qi Zhang ◽

Wen Zhao ◽

Yan-Ping Wang ◽

...

Keyword(s):

Proton Irradiation ◽

Synergistic Effects ◽

Random Access ◽

Random Access Memory ◽

Static Random Access Memory ◽

Single Event Upset ◽

Single Event ◽

Total Ionizing Dose ◽

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Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.040209 ◽

2010 ◽

Vol 49 (4) ◽

pp. 040209 ◽

Author(s):

Shuu'ichirou Yamamoto ◽

Yusuke Shuto ◽

Satoshi Sugahara

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Access Memory ◽

Effect Transistor

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Stable Readout Circuit for Ferroelectric Random Access Memory Using Complementary Metal–Oxide–Semiconductor-Inverter-Based Capacitive-Feedback Charge-Integration Scheme

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04de10 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DE10

Author(s):

Koji Kotani ◽

Yohei Koshimoto ◽

Takashi Ito

Keyword(s):

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Integration Scheme ◽

Readout Circuit ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Charge Integration

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Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3202 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3202-3206 ◽

Author(s):

K. R. Udayakumar ◽

K. Boku ◽

K. A. Remack ◽

J. Rodriguez ◽

S. R. Summerfelt ◽

...

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Access Memory ◽

Ferroelectric Random Access Memory

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Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memory

Acta Physica Sinica ◽

10.7498/aps.62.188502 ◽

2013 ◽

Vol 62 (18) ◽

pp. 188502

Author(s):

Ding Li-Li ◽

Guo Hong-Xia ◽

Chen Wei ◽

Yan Yi-Hua ◽

Xiao Yao ◽

...

Keyword(s):

Simulation Study ◽

Random Access ◽

Random Access Memory ◽

Static Random Access Memory ◽

Single Event Upset ◽

Single Event ◽

Ionizing Irradiation ◽

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“Mask Enhancer” Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249 µm2Static Random Access Memory Contact Layer Fabrication

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.5396 ◽

2006 ◽

Vol 45 (6B) ◽

pp. 5396-5403 ◽

Author(s):

Takashi Yuito ◽

Vincent Wiaux ◽

Lieve Van Look ◽

Geert Vandenberghe ◽

Shigeo Irie ◽

...

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Contact Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bd03 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BD03 ◽

Author(s):

Hyoungjun Na ◽

Tetsuo Endoh

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Access Memory ◽

Effect Transistor

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