Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

K. R. Udayakumar; K. Boku; K. A. Remack; J. Rodriguez; S. R. Summerfelt; F. G. Celii; S. Aggarwal; J. S. Martin; L. Hall; L. Matz; B. Rathsack; H. McAdams; T. S. Moise

doi:10.1143/jjap.45.3202

Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3202 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3202-3206 ◽

Cited By ~ 10

Author(s):

K. R. Udayakumar ◽

K. Boku ◽

K. A. Remack ◽

J. Rodriguez ◽

S. R. Summerfelt ◽

...

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Access Memory ◽

Ferroelectric Random Access Memory

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Stable Readout Circuit for Ferroelectric Random Access Memory Using Complementary Metal–Oxide–Semiconductor-Inverter-Based Capacitive-Feedback Charge-Integration Scheme

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04de10 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DE10

Author(s):

Koji Kotani ◽

Yohei Koshimoto ◽

Takashi Ito

Keyword(s):

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Integration Scheme ◽

Readout Circuit ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Charge Integration

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“Mask Enhancer” Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249 µm2Static Random Access Memory Contact Layer Fabrication

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.5396 ◽

2006 ◽

Vol 45 (6B) ◽

pp. 5396-5403 ◽

Cited By ~ 1

Author(s):

Takashi Yuito ◽

Vincent Wiaux ◽

Lieve Van Look ◽

Geert Vandenberghe ◽

Shigeo Irie ◽

...

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Contact Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Access Memory

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Recovery of single event upset in advanced complementary metal—oxide semiconductor static random access memory cells

Chinese Physics B ◽

10.1088/1674-1056/21/2/029401 ◽

2012 ◽

Vol 21 (2) ◽

pp. 029401 ◽

Cited By ~ 8

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bin Liang ◽

Bi-Wei Liu

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Single Event Upset ◽

Single Event ◽

Access Memory

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Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology

Thin Solid Films ◽

10.1016/j.tsf.2012.11.124 ◽

2013 ◽

Vol 533 ◽

pp. 24-28 ◽

Cited By ~ 15

Author(s):

Therese Diokh ◽

Elise Le-Roux ◽

Simon Jeannot ◽

Carlo Cagli ◽

Vincent Jousseaume ◽

...

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Access Memory

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Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dd08 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DD08 ◽

Cited By ~ 1

Author(s):

Feifei Zhang ◽

Xiang Li ◽

Bin Gao ◽

Bing Chen ◽

Peng Huang ◽

...

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Access Memory ◽

Switching Current

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Characteristics of Dual Polymetal (W/WNx/Poly-Si) Gate Complementary Metal Oxide Semiconductor for 0.1 µm Dynamic Random Access Memory Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.1969 ◽

2000 ◽

Vol 39 (Part 1, No. 4B) ◽

pp. 1969-1973 ◽

Cited By ~ 3

Author(s):

Yong–Hae Kim ◽

Sung–Keun Chang ◽

Seon–Soon Kim ◽

Jun–Gi Choi ◽

Sang–Hee Lee ◽

...

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Dynamic Random Access Memory ◽

Oxide Semiconductor ◽

Access Memory

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Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dd08 ◽

2012 ◽

Vol 51 ◽

pp. 04DD08 ◽

Cited By ~ 2

Author(s):

Feifei Zhang ◽

Xiang Li ◽

Bin Gao ◽

Bing Chen ◽

Peng Huang ◽

...

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Access Memory ◽

Switching Current

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Design of experiments and integer linear programming-assisted conjugate-gradient optimisation of high-/metal-gate nano-complementary metal-oxide semiconductor static random access memory

IET Computers & Digital Techniques ◽

10.1049/iet-cdt.2011.0166 ◽

2012 ◽

Vol 6 (4) ◽

pp. 240

Author(s):

S.P. Mohanty ◽

E. Kougianos

Keyword(s):

Linear Programming ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Access Memory ◽

Metal Gate ◽

High Metal

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Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.040209 ◽

2010 ◽

Vol 49 (4) ◽

pp. 040209 ◽

Cited By ~ 5

Author(s):

Shuu'ichirou Yamamoto ◽

Yusuke Shuto ◽

Satoshi Sugahara

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Access Memory ◽

Effect Transistor

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The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells

Chinese Physics B ◽

10.1088/1674-1056/22/2/029402 ◽

2013 ◽

Vol 22 (2) ◽

pp. 029402 ◽

Cited By ~ 1

Author(s):

Da-Wei Li ◽

Jun-Rui Qin ◽

Shu-Ming Chen

Keyword(s):

Supply Voltage ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Single Event Upset ◽

Single Event ◽

Access Memory

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