Achieving High-Performance Multilayer MoSe2 Photodetectors by Defect Engineering

2021 ◽  
Author(s):  
Jintao Hong ◽  
Fengyuan Zhang ◽  
Zheng Liu ◽  
Jie Jiang ◽  
Zhangting Wu ◽  
...  
2021 ◽  
pp. 100432
Author(s):  
Can Yang ◽  
Xian Liu ◽  
Chunlin Teng ◽  
Xiaohong Cheng ◽  
Fei Liang ◽  
...  

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.


Research ◽  
2019 ◽  
Vol 2019 ◽  
pp. 1-14 ◽  
Author(s):  
Jie Jiang ◽  
Tao Xu ◽  
Junpeng Lu ◽  
Litao Sun ◽  
Zhenhua Ni

Two-dimensional (2D) materials have attracted increasing interests in the last decade. The ultrathin feature of 2D materials makes them promising building blocks for next-generation electronic and optoelectronic devices. With reducing dimensionality from 3D to 2D, the inevitable defects will play more important roles in determining the properties of materials. In order to maximize the functionality of 2D materials, deep understanding and precise manipulation of the defects are indispensable. In the recent years, increasing research efforts have been made on the observation, understanding, manipulation, and control of defects in 2D materials. Here, we summarize the recent research progress of defect engineering on 2D materials. The defect engineering triggered by electron beam (e-beam), plasma, chemical treatment, and so forth is comprehensively reviewed. Firstly, e-beam irradiation-induced defect evolution, structural transformation, and novel structure fabrication are introduced. With the assistance of a high-resolution electron microscope, the dynamics of defect engineering can be visualized in situ. Subsequently, defect engineering employed to improve the performance of 2D devices by means of other methods of plasma, chemical, and ozone treatments is reviewed. At last, the challenges and opportunities of defect engineering on promoting the development of 2D materials are discussed. Through this review, we aim to build a correlation between defects and properties of 2D materials to support the design and optimization of high-performance electronic and optoelectronic devices.


2021 ◽  
Author(s):  
Tingting Zhang ◽  
Weinan Xing ◽  
haoxin li ◽  
Zhangzhen Cai ◽  
Yichi Zhang ◽  
...  

Simultaneously exploration surface defect engineering and morphology control are critical for its application in designing high-performance solar energy utilization system. In this study, a new strategy based on the nitrogen...


2021 ◽  
pp. 2001262
Author(s):  
Yaqiong Zhong ◽  
Debalaya Sarker ◽  
Tao Fan ◽  
Liangliang Xu ◽  
Xie Li ◽  
...  

2018 ◽  
Vol 140 (29) ◽  
pp. 9282-9290 ◽  
Author(s):  
Chongjian Zhou ◽  
Yong Kyu Lee ◽  
Joonil Cha ◽  
Byeongjun Yoo ◽  
Sung-Pyo Cho ◽  
...  

Nano Energy ◽  
2017 ◽  
Vol 31 ◽  
pp. 258-263 ◽  
Author(s):  
Sun Jin Kim ◽  
Hyeongdo Choi ◽  
Yongjun Kim ◽  
Ju Hyung We ◽  
Ji Seon Shin ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document