Facile Sensitizing of PbSe Film for NIR Infrared Photodetector by a microwave Plasma processing

2021 ◽  
Author(s):  
Kangyi Zhao ◽  
Shuanglong Feng ◽  
Chan Yang ◽  
Jun Shen ◽  
Yongqi Fu
1990 ◽  
Vol 99 (1-4) ◽  
pp. 188-191 ◽  
Author(s):  
Kenji Hayakawa ◽  
Saburo Iwama

1990 ◽  
Vol 7 (5-6) ◽  
pp. 328-339 ◽  
Author(s):  
S K Ray ◽  
C K Maiti ◽  
N B Chakrabarti

1987 ◽  
Vol 92 ◽  
Author(s):  
Mehrdad M. Moslehi

ABSTRACTRapid thermal processing of silicon in oxygen and ammonia ambients is an attractive technique for the growth of thin dielectrics such as silicon nitride, silicon dioxide, nitrided oxides, oxidized nitrides, and application-specific (composition-tailored) insulators. Multicycle rapid thermal growth processes are suitable for dielectric engineering and in-situformation of thin layered insulators with a variety of controllable oxygen and nitrogen compositional depth profiles by appropriate design of the temperature and ambient gas cycles. The growth and electrical properties of various dielectrics rapidly grown by the state-of-the-art techniques and their corresponding device performance are examined. Rapid thermal processing and microwave plasma generation have been combined in a novel custom-made multipurpose reactor for rapid plasma-enhanced multiprocessing of Si, Ge, and GaAs. Thin germanium nitride dielectrics can be formed by rapid thermal or plasma nitridation for germanium CMOS applications. Combination of in-situ rapid plasma nitridation followed by silicon nitride deposition may prove to be effective for MIS structures and surface passivation on GaAs. These new applications of rapid thermal/plasma processing are additional steps towards realization of fully RTP-based Si VLSI fabrication processes and development of new devices and technologies on other semiconductor materials.


1999 ◽  
Vol 70 (2) ◽  
pp. 1530-1534 ◽  
Author(s):  
T. H. Chang ◽  
L. R. Barnett ◽  
K. R. Chu ◽  
F. Tai ◽  
C. L. Hsu

Author(s):  
M. G. Burke ◽  
M. N. Gungor ◽  
M. A. Burke

Intermetallic matrix composites are candidates for ultrahigh temperature service when light weight and high temperature strength and stiffness are required. Recent efforts to produce intermetallic matrix composites have focused on the titanium aluminide (TiAl) system with various ceramic reinforcements. In order to optimize the composition and processing of these composites it is necessary to evaluate the range of structures that can be produced in these materials and to identify the characteristics of the optimum structures. Normally, TiAl materials are difficult to process and, thus, examination of a suitable range of structures would not be feasible. However, plasma processing offers a novel method for producing composites from difficult to process component materials. By melting one or more of the component materials in a plasma and controlling deposition onto a cooled substrate, a range of structures can be produced and the method is highly suited to examining experimental composite systems. Moreover, because plasma processing involves rapid melting and very rapid cooling can be induced in the deposited composite, it is expected that processing method can avoid some of the problems, such as interfacial degradation, that are associated with the relatively long time, high temperature exposures that are induced by conventional processing methods.


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