scholarly journals Influence of zinc ion concentration on structure, morphology and optical properties of spray deposited ZnO thin films

2021 ◽  
Vol 10 (3) ◽  
pp. 198
Author(s):  
Sarika Vishvnbath Jadhav ◽  
Limbraj Sopan Ravangave
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Crystallite Size ◽  
Zinc Acetate ◽  
Zinc Ion ◽  
Ion Concentration ◽  
Zno Thin Films ◽  
Electromagnetic Spectrum ◽  
Structure Morphology ◽  
Wide Range

<p>Zinc Oxide (ZnO) thin films were deposited for five different molarity (M) of Zinc acetate hydrated (0.075, 0.1, 0.125, 0.15, 0.175 M) using simple spray technique to study the effect of zinc ion concentration on structure, morphology and optical properties. The XRD patterns of deposited ZnO thin films show hexagonal crystal structure with wurtzite symmetry. The effect of molarity on morphology was studied using scanning electron microscopy (SEM). The elemental analysis was studied by using energy dispersive X-ray analysis (EDX). The optical absorption was recorded by using systronics double beam spectrophotometer (2201). Crystallite size estimated from XRD data was in nanometre (nm) range; however, films deposited for 0.15 M zinc acetate show maximum crystallite size (66 nm) as compared to other samples. All the films show low absorption in wide range (340-999 nm) of electromagnetic spectrum. However, ZnO film deposited for 0.15 zinc acetate hydrated shows maximum blue shifting of absorption edge and higher band gap (3.8 eV) as compared to other samples.</p>

SPECTROSCOPIC ELLIPSOMETRY STUDIES ON ZINC OXIDE THIN FILMS DEPOSITED BY SOL–GEL METHOD WITH VARIOUS PRECURSOR CONCENTRATIONS

2019 ◽  
Vol 26 (03) ◽  
pp. 1850158 ◽  
Author(s):  
MARYAM MOTALLEBI AGHGONBAD ◽  
HASSAN SEDGHI
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Zinc Acetate ◽  
Optical Band Gap ◽  
Zinc Acetate Dihydrate ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Acetate Dihydrate

Zinc Oxide thin films were deposited on glass substrates by sol–gel spin coating method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine were used as precursor, solvent and stabilizer, respectively. Zinc acetate dihydrate was used with different molar concentrations of 0.15, 0.25 and 0.5 M. Optical properties of ZnO thin films such as dielectric constants, absorption coefficient, Urbach energy and optical band gap energy were calculated by spectroscopic ellipsometry (SE) method. The effect of zinc acetate concentration on optical properties of ZnO thin films is investigated. ZnO thin film with Zn concentration of 0.25 M had the highest optical band gap. Wemple DiDomenico oscillator model was used for calculation of the energy of effective dispersion oscillator, the dispersion energy, the high frequency dielectric constant, the long wavelength refractive index and the free carrier concentration.

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno

An investigation on linear optical properties of dilute Cr doped ZnO thin films synthesized via sol–gel process

2011 ◽  
Vol 509 (30) ◽  
pp. 7854-7860 ◽  
Author(s):  
A. Esmaielzadeh Kandjani ◽  
M. Farzalipour Tabriz ◽  
O. Mohammad Moradi ◽  
H.R. Rezaeian Mehr ◽  
S. Ahmadi Kandjani ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Sol Gel Process ◽  
Linear Optical Properties ◽  
Doped Zno ◽  
Linear Optical

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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