scholarly journals Formation of nanoscale structures on the surface of gallium arsenide by local anodic oxidation and plasma chemical etching

2018 ◽  
Vol 1124 ◽  
pp. 041024
Author(s):  
V S Klimin ◽  
M S Solodovnik ◽  
S A Lisitsyn ◽  
A A Rezvan ◽  
S V Balakirev
Keyword(s):  
Gallium Arsenide ◽  
Anodic Oxidation ◽  
Chemical Etching ◽  
Plasma Chemical ◽  
Nanoscale Structures ◽  
Plasma Chemical Etching ◽  
Local Anodic Oxidation

Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

2018 ◽  
Vol 52 (11) ◽  
pp. 1473-1476
Author(s):  
A. I. Okhapkin ◽  
P. A. Yunin ◽  
M. N. Drozdov ◽  
S. A. Kraev ◽  
E. V. Skorokhodov ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Inductively Coupled Plasma ◽  
Chemical Etching ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Plasma Chemical Etching

A study of the formation modes of nanosized oxide structures of gallium arsenide by local anodic oxidation

2012 ◽  
Vol 46 (13) ◽  
pp. 1616-1621 ◽  
Author(s):  
O. A. Ageev ◽  
V. A. Smirnov ◽  
M. S. Solodovnik ◽  
A. V. Rukomoikin ◽  
V. I. Avilov
Keyword(s):  
Gallium Arsenide ◽  
Anodic Oxidation ◽  
Local Anodic Oxidation ◽  
Nanosized Oxide

scholarly journals Experimental studies of plasma-chemical etching of glass when manufacturing diffraction and hologram optical elements

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Sergey Odinokov ◽  
Gaik Sagatelyan ◽  
Anton Goncharov ◽  
Mikhail Kovalev ◽  
Artem Solomashenko ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Experimental Studies ◽  
Plasma Chemical ◽  
Optical Elements ◽  
Plasma Chemical Etching

FREQUENCY TRIMMING OF THE STW RESONATORS WITH WORKING FREQUENCY UP TO 1 GHZ

2021 ◽  
pp. 79-85
Author(s):  
A. N. Kuznetsov ◽  
S. A. Doberstein ◽  
I. V. Veremeev
Keyword(s):  
Quality Factor ◽  
Chemical Etching ◽  
Single Port ◽  
Frequency Range ◽  
Plasma Chemical ◽  
Etching Method ◽  
Plasma Chemical Etching ◽  
Working Frequency ◽  
Frequency Trimming

This paper presents the data for frequency trimming of the single port STW resona-tors in a frequency range of 500–1000 MHz by plasma chemical etching method. The main parameters of resonators after frequency trimming are given: frequency tolerance <±100·10–6, quality factor of 8600–9500, equivalent elements needed for use of the STW resonators.

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

2019 ◽  
Vol 822 ◽  
pp. 594-600
Author(s):  
E.V. Endiiarova ◽  
Singh Ruby
Keyword(s):  
Chemical Etching ◽  
Optimal Performance ◽  
Plasma Chemical ◽  
Plasma Chemical Etching

. The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1 [20; 1000] pF, С2 [4; 100] pF, and inductor with inductance 2,5 μH.

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