Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

2018 ◽  
Vol 52 (11) ◽  
pp. 1473-1476
Author(s):  
A. I. Okhapkin ◽  
P. A. Yunin ◽  
M. N. Drozdov ◽  
S. A. Kraev ◽  
E. V. Skorokhodov ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Inductively Coupled Plasma ◽  
Chemical Etching ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Plasma Chemical Etching

scholarly journals XXV Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 9-12 марта 2021 г. Влияние добавки хлорпентафторэтана в составе хлорсодержащей плазмы на скорость и характеристики профиля травления арсенида галлия

2021 ◽  
Vol 55 (10) ◽  
pp. 837
Author(s):  
А.И. Охапкин ◽  
С.А. Краев ◽  
Е.А. Архипова ◽  
В.М. Данильцев ◽  
О.И. Хрыкин ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Inductively Coupled Plasma ◽  
Substrate Surface ◽  
Etching Rate ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Initial Stage ◽  
Plasma Chemical Etching ◽  
Etching Profile ◽  
By Products

In this work, the dependence of plasma-chemical etching rate and the roughness of the surface of gallium arsenide crater on chloropentafluoroethane (C2F5Cl) concentration in a mixture with chlorine, forward power and etching duration were studied. Characteristics of GaAs etching crater were studied by white light interferometry and scanning electron microscopy. It is shown that C2F5Cl addition in chlorine-containing inductively coupled plasma led to a nonlinear change of gallium arsenide etching rate with time which can be explained by passivation of substrate surface at the initial stage by products of freon decay. Along with this, characteristics of the etching profile of GaAs are significantly improved. Forward power increase contributes to development of roughness, while the etching rate increases nonlinearly.

scholarly journals Application of plasma chemical treatment for manufacturing of instrument microstructures based on gallium nitride

2021 ◽  
Vol 2052 (1) ◽  
pp. 012057
Author(s):  
A V Zhelannov ◽  
B I Seleznev
Keyword(s):  
Gallium Nitride ◽  
Inductively Coupled Plasma ◽  
Chemical Etching ◽  
Smooth Surface ◽  
Plasma Source ◽  
Epitaxial Layers ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Plasma Chemical Etching ◽  
Vertical Contact

Abstract The epitaxial layers of n-n+-GaN were processed by plasma-chemical etching using a Sentech SI 500 unit equipped with an inductively coupled plasma source. The regimes of gallium nitride processing in chlorine plasma have been established, which make it possible to remove epitaxial layers of the semiconductor down to a depth of 10 μm with a smooth surface. Based on the obtained processing results, prototype samples of Schottky diode microstructures with quasi-vertical contact geometry were manufactured. The effect of pretreatment on the characteristics of instrument microstructures is demonstrated.

scholarly journals Experimental studies of plasma-chemical etching of glass when manufacturing diffraction and hologram optical elements

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Sergey Odinokov ◽  
Gaik Sagatelyan ◽  
Anton Goncharov ◽  
Mikhail Kovalev ◽  
Artem Solomashenko ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Experimental Studies ◽  
Plasma Chemical ◽  
Optical Elements ◽  
Plasma Chemical Etching

FREQUENCY TRIMMING OF THE STW RESONATORS WITH WORKING FREQUENCY UP TO 1 GHZ

2021 ◽  
pp. 79-85
Author(s):  
A. N. Kuznetsov ◽  
S. A. Doberstein ◽  
I. V. Veremeev
Keyword(s):  
Quality Factor ◽  
Chemical Etching ◽  
Single Port ◽  
Frequency Range ◽  
Plasma Chemical ◽  
Etching Method ◽  
Plasma Chemical Etching ◽  
Working Frequency ◽  
Frequency Trimming

This paper presents the data for frequency trimming of the single port STW resona-tors in a frequency range of 500–1000 MHz by plasma chemical etching method. The main parameters of resonators after frequency trimming are given: frequency tolerance <±100·10–6, quality factor of 8600–9500, equivalent elements needed for use of the STW resonators.

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