Nd doped lead titanate crystals for microelectronic memory device applications

2016 ◽  
Vol 27 (7) ◽  
pp. 7478-7486
Author(s):  
Mitesh Chakraborty ◽  
Swarat Chaudhuri ◽  
Vineet Kumar Rai ◽  
Vishal Mishra
Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.


2008 ◽  
Vol 113 ◽  
pp. 012034 ◽  
Author(s):  
N Nedev ◽  
D Nesheva ◽  
E Manolov ◽  
R Brüggemann ◽  
S Meier ◽  
...  

2013 ◽  
Vol 652-654 ◽  
pp. 1846-1850
Author(s):  
Thin Thin Thwe ◽  
Than Than Win ◽  
Yin Maung Maung ◽  
Ko Ko Kyaw Soe

Hydrothermal synthesized lead titanate (PbTiO3¬) powder was prepared in a Teflon-lined stainless steel bomb at different bath temperatures. X-ray diffraction was performed to examine the phase assignment and crystallographic properties of hydrothermal synthesized lead titanate powder. Silicon dioxide (SiO2) was thermally deposited and adapted as intermediate layer on p-Si (100) substrates for MFIS (Metal/Ferroelectric/ Insulator/Semi-conductor) design. The microstructures of PbTiO3 film for both MFS and MFIS designs were observed by scanning electron microscopy (SEM). Charge conduction mechanism was also interpreted by C-2-V relationship. Polarization and electric field characteristics were measured by Sawyer-Tower circuit and good hysteresis nature was formed for both structures of the films. The loop of MFIS was wider than that of MFS cell. Also, the higher value of polarization (Ps=3.21E-03µC/cm2) for MFIS could be explained on the basis of higher dipole moment in this SiO2 buffer layer.


2014 ◽  
Vol 53 (4) ◽  
pp. 602-614 ◽  
Author(s):  
Lei Dong ◽  
Han-Sheng Sun ◽  
Jau-Tzeng Wang ◽  
Wen-Ya Lee ◽  
Wen-Chang Chen

2020 ◽  
Vol 14 (6) ◽  
Author(s):  
Sreemanta Mitra ◽  
Saloni Kakkar ◽  
Tanweer Ahmed ◽  
Arindam Ghosh

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