scholarly journals A Design With High Order Compensation and low Temperature Drift Bandgap Reference Voltage Source

2019 ◽  
Vol 1176 ◽  
pp. 062067
Author(s):  
Yuqing Deng ◽  
Xingjie Ge
2014 ◽  
Vol 687-691 ◽  
pp. 3489-3493
Author(s):  
Wei Qu ◽  
Li Mei Hou ◽  
Xiao Xin Sun ◽  
Jing Yu Sun ◽  
Liang Yu Li

A high-performance bandgap reference voltage source design method is proposed in this paper, according to the shortcomings of traditional bandgap reference voltage source. This method combined CSMC 0.35μm CMOS process with Aether software technology, enabling to improve the bandgap reference source op amp performance and take into account accuracy and stability of the system. From the experimental results: this bandgap reference voltage source output voltage has changed about 63 mV when the temperature varied from to , and the line regulator is 0.4mV/V when the power supply voltage varied from 3.2V to 3.3V. This system has advantages of high accuracy and good stability.


2014 ◽  
Vol 9 (1) ◽  
pp. 16-24
Author(s):  
Eder Issao Ishibe ◽  
João Navarro

A bandgap reference voltage source with a temperature coefficient adjustment block was proposed. The bandgap topology employs current summation and the circuit was designed through metaheuristic algorithms in a 0.35-mm CMOS technology. Simulations with typical parameters show that the designed circuit has temperature coefficient of 15 ppm/0C, line regulation of 263 ppm/V, and current consumption of 2.71 uA in 1.0 V power supply. An additional 3-bit temperature adjustment block allowed keeping the temperature coefficient values lower than 26.6 ppm/0C for 90% of the circuits, without interfering with the reference voltage output or line regulation values.


Circuit World ◽  
2017 ◽  
Vol 43 (4) ◽  
pp. 141-144
Author(s):  
Songlin Wang ◽  
Shuang Feng ◽  
Hui Wang ◽  
Yu Yao ◽  
Jinhua Mao ◽  
...  

Purpose This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology. Design/methodology/approach Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit. Findings This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip. Originality/value This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control.


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