scholarly journals The Effect of Sn Dopant on the Electrical and Optical Properties of ZnO Thin Films

2021 ◽  
Vol 1772 (1) ◽  
pp. 012013
Author(s):  
Yasni Novi Hendri ◽  
Muhammad Abiyyu Kenichi Purbayanto ◽  
Sendi Nugraha Pratama ◽  
Nabilah Zuhairah ◽  
Yudi Darma
2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  

2007 ◽  
Vol 40 (22) ◽  
pp. 7041-7045 ◽  
Author(s):  
Huiming Huang ◽  
Xuefeng Ruan ◽  
Guojia Fang ◽  
Meiya Li ◽  
X Z Zhao

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .


Sign in / Sign up

Export Citation Format

Share Document