scholarly journals The effect of dopant material to optical properties: energy band gap Tin Oxide thin film

2021 ◽  
Vol 1816 (1) ◽  
pp. 012114
Author(s):  
A Doyan ◽  
Susilawati ◽  
L Muliyadi ◽  
S Hakim ◽  
H Munandar ◽  
...  
2015 ◽  
Vol 1107 ◽  
pp. 520-525
Author(s):  
Fouziah Md.Yassin ◽  
Saturi Baco ◽  
Noraini Abdullah

Tin Oxide (SnO2) thin film is one of the important transparent conducting oxides (TCOs) due to its electrical and optical transparency in visible light spectrum. This study presents the best model in estimating optical properties of tin oxide thin film which is performed using the absorption coefficient of the film. The annealing temperature is at 473 K prepared by radio frequency sputtering technique. Twelve multiple regression (MR) models with interactions are generated from three independent variables (transmission spectra, energy band gap and the wavelength of light). They are developed from data sets of 50. The best model M8.0.0 is chosen from the 6 selected models based on the Eight Selection Criterion (8SC). Best model will have the majority criteria with the least value. Factors affect the absorption coefficient are found to be X1(transmission spectra), X2(energy band gap) and X1X2(interaction between transmission spectra and energy band gap).


2019 ◽  
Vol 16 (2) ◽  
pp. 0361
Author(s):  
Mahmood Et al.

      Spray pyrolysis technique was subjected to synthesized (SnO2)1-x (TiO2: CuO) x Thin films on different substrates like glass and single crystal silicon using. The structure of the deposited films was studied using x-ray diffraction. A more pronounced diffraction peaks of SnO2 while no peaks of (CuO , TiO2 ) phase appear in the X-ray profiles by increasing of the content of (TiO2 , CuO) in the sprayed films. Mixing concentration (TiO2 , CuO) influences on the size of the crystallites of the SnO2 films ,the size of crystallites of the spray paralyzed oxide films change in regular manner by increasing of (TiO2 , CuO) amount. The effect of mixing concentration on the optical properties of the films was also investigated. The reflectance and transmittance spectra  in the wavelength range (300-1100) nm were employed to determine the optical properties such as energy band gap (Eg) and refractive index (n),  extinction coefficient  (k) , real and imaginary parts of dielectric constants (ε1, ε2) for (SnO2)1-x(TiO2:CuO)x films. The energy band gap omit of which showed reduction from (3.65 to 2.2) eV by reducing of SnO2 amount from (100 to 70) % .The reduction of energy band gap was ascribed to the new tail states introduced in the band gap of tin oxide. The sensitivity of the prepared sensor film was determined resistance difference of the films when exposed to oxidizing gas. The data declared that the mixed SnO2 films have better sensitivity in comparison with unmixed films.


2019 ◽  
Vol 966 ◽  
pp. 398-403
Author(s):  
Yoyok Cahyono ◽  
Novita Dwi Purnamasari ◽  
Mochamad Zainuri ◽  
Suminar Pratapa ◽  
Darminto

Effect of defect - through observation of energy absorption Urbach, on deposition rate, energy band gap, and surface roughness of intrinsic thin film are investigated using Radio Frequency Plasma Enhance Chemical Vapor Deposition (RF-PECVD). Films are grown on ITO (Indium Tin Oxide) glass substrate. Analysis of energy band gap is conducted to determine changes in the structure of a thin film of a-Si:H. Energy band gap is important to determine the portion of the spectrum of sunlight that is absorbed solar cells. From the characterization using UV-Vis spectrometer and the Tauc’s plot method, the width of the resulting energy band gap is greater if the hydrogen dilution is increased. It can be shown that the increase of the hydrogen dilution, will increase the energy band gap, and the surface roughness of thin layers. Instead, the improvement of the hydrogen dilution decrease the rate of deposition and Urbach energy. It is estimated that with greater hydrogen dilution, an intrinsic thin film of a-Si:H is more conductive for more reduction in residual of band tail defects or dangling bond defects.


2021 ◽  
Vol 2034 (1) ◽  
pp. 012026
Author(s):  
A A Faremi ◽  
M A Adekoya ◽  
S S Oluyamo ◽  
P A Adeyemo ◽  
A T Akindadelo ◽  
...  

2015 ◽  
Vol 773-774 ◽  
pp. 682-685
Author(s):  
Muhammad Luqman Mohd Napi ◽  
Ng Kim Seng ◽  
Mohd Khairul Ahmad

Fluorine doped tin oxide (FTO) thin film was prepared by using two different precursor solutions which are tin (ii) chloride dihydrate and tin (iv) chloride pentahydrate. These two precursors are used in spray pyrolysis process to prepare the fluorine doped tin oxide thin film. Surface Morphology of the thin film was characterized using field emission scanning electron microscope (FE-SEM). FESEM image shows the particle distribution and the morphology of fluorine doped tin oxide thin film. Two point probe I-V measurement and UV-Vis spectroscopy were used to study the electrical and optical properties of both films. Both precursors produced different particles distribution, electrical properties and also optical properties. The results show that the sheet resistance (Rs) of fluorine doped SnO2 is about 49.24×106Ω for tin (iv) chloride pentahydrate compared to 43.03×1012Ω for tin (ii) chloride dihydrate


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