scholarly journals Characterization of Organic Compound Doped Inorganic Ammonium Phosphate: Crystal Formation and Opto-Electrical Properties

2021 ◽  
Vol 2070 (1) ◽  
pp. 012004
Author(s):  
A. Jegatheesan ◽  
E. Rajasekaran
Keyword(s):  
Electrical Properties ◽  
Organic Compound ◽  
Inorganic Material ◽  
Ammonium Phosphate ◽  
Crystal Formation ◽  
Walk Away ◽  
Electronic Industry ◽  
Structural And Electrical Properties ◽  
The Subject

Abstract The opto-electrical properties of mixing organic compound with inorganic material is the subject matter of electronic industry. Nonlinear active single crystals of amino acid doped ammonium phosphate was characterised using various experimental techniques. Specifically alanine was doped with inorganic material and characterised in terms of carbon role in structure formation and related properties. The structural and electrical properties are studied by analysing absorption, transmission, hardness and conductivity of the doped one. The structure and electrical framework are well suited with expected values of pure inorganic one. Otherwise the organic one mixed with inorganic one does changes these properties remarkably which are essential for application in modern livelihood of human nature. The single crystal obtained from doping of organic one with the properties of inorganic material proves to be suitable for robo one to walk away with newer developments. It promises a newer way of developing crystals with good mechanical strength, flexible and all kinds of opto-electrical properties. Interestingly the modern electronic appliances will greatly benefit from this development of organic one to the inorganic one.

scholarly journals Structural and Electrical Properties Characterization of Sb1.52Bi0.48Te3.0 Melt-Spun Ribbons

Crystals ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 172 ◽  
Author(s):  
Viktoriia Ohorodniichuk ◽  
Anne Dauscher ◽  
Elsa Branco Lopes ◽  
Sylvie Migot ◽  
Christophe Candolfi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Melt Spun ◽  
Melt Spun Ribbons ◽  
Properties Characterization

Structural and electrical properties characterization of (1–x)PbZr0.52Ti0.48O3–xBaFe0.5Nb0.5O3 system

2006 ◽  
Vol 83 (2) ◽  
pp. 295-299 ◽  
Author(s):  
S. Eitssayeam ◽  
U. Intatha ◽  
G. Rujijanagul ◽  
K. Pengpat ◽  
T. Tunkasiri
Keyword(s):  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Properties Characterization

Growth and Characterization of Epitaxial GaAs on Ge/Si Substrates

1983 ◽  
Vol 25 ◽  
Author(s):  
Robert M. Fletcher ◽  
D. Ken Wagner ◽  
Joseph M. Ballantyne
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Organometallic Vapor Phase Epitaxy ◽  
Si Substrate ◽  
Epitaxial Gaas ◽  
Si Substrates ◽  
Structural And Electrical Properties

ABSTRACTEpitaxial GaAs layers have been grown on Ge-coated Si substrates. Deposition of epitaxial Ge was performed by electron beam evaporation onto a <100> Si substrate. GaAs was then deposited by organometallic vapor-phase epitaxy. Films grown over large areas (∼1 cm2) and by selective epitaxy in stripe patterns (∼50 μm wide) have been evaluated by a number of techniques to determine structural and electrical properties. In addition, we report what we believe to be the first LEDs fabricated in GaAs/Ge/Si heterostructures.

Characterization of the Structural and Electrical Properties of Ion Beam Sputtered ZnO Films

2011 ◽  
Vol 700 ◽  
pp. 49-52 ◽  
Author(s):  
Peter P. Murmu ◽  
John Kennedy ◽  
Ben J. Ruck ◽  
Andreas Markwitz
Keyword(s):  
Electrical Properties ◽  
Ion Beam ◽  
Compressive Strain ◽  
Lattice Parameter ◽  
Zno Films ◽  
Structural And Electrical Properties ◽  
Crystallite Sizes ◽  
Afm Micrographs ◽  
Parameter Values

We report the structural and electrical properties of ion beam sputtered ZnO films vacuum annealed at varying temperatures. XRD results revealed that the films grow along thec-axis. The crystallite sizes increase from ~8 to ~30 nm upon annealing at 800ºC. Annealing aided to recover the compressive strain and regain the standard lattice parameter values. The RMS surface roughness increased to ~5.0 nm after annealing at 800ºC as observed in AFM micrographs. Increased resistivity on the annealed films suggested that the oxygen vacancies are compensated by de-trapped oxygen at grain boundaries.

Structural and Electrical Properties of Silica Materials from Rice Husks

2021 ◽  
Vol 38 (2) ◽  
Author(s):  
Casnan ◽  
Purnawan ◽  
Erliza Noor ◽  
Hartrisari Hardjomidjojo ◽  
Irzaman ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Rice Husk Ash ◽  
Silanol Group ◽  
Xrd Analysis ◽  
Silica Content ◽  
Dielectric Constants ◽  
Rice Husks ◽  
Capacitor Plate ◽  
Structural And Electrical Properties

This study aimed to analyze the structural and electrical properties of silica from rice husks recovered by the process of ashing on a medium-scale furnace with a capacity of 15 kg. Rice husks were burned at a heating rate of 1.5°C /min to a temperature of 900°C, where the temperature was retained for 1 hour each at 400°C and 900°C. The methodology of this research was conducted through the process of ashing, extraction of silica, and characterization of its structural electrical properties. The silica extracted from rice husk ash had a relatively low water content by the low absorption intensity of the group –OH at 3610 cm-1. The silica was dominated more by the siloxane group (Si-O-Si) compared with the silanol group (Si-OH). Based on XRD analysis, the silica structure was confirmed as tetragonal. The silica also had a decreased resistance, impedance, and inductance as the frequency increased. These results indicate that the obstacles contained in silica content decrease with an increase in frequency. The decreasing of dielectric constants was caused by the frequency affecting the capacitance; i.e., increased frequency caused more waves to be transmitted each second. The electric current was turned before the capacitor plate was fully charged, which caused quick charge drainage in the capacitor plate and therefore reduced the ability of a material to store the electric charge.

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