Optical Characterization of the Structural and Electrical Properties of the n-GaP Nanolayers Grown on Conductive (001) n-GaP Substrates

2021 ◽  
Vol 63 (1) ◽  
pp. 79-83 ◽  
Author(s):  
B. Kh. Bairamov ◽  
V. V. Toporov ◽  
F. B. Bayramov
Keyword(s):  
Electrical Properties ◽  
Optical Characterization ◽  
Structural And Electrical Properties

scholarly journals Structural and Electrical Properties Characterization of Sb1.52Bi0.48Te3.0 Melt-Spun Ribbons

Crystals ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 172 ◽  
Author(s):  
Viktoriia Ohorodniichuk ◽  
Anne Dauscher ◽  
Elsa Branco Lopes ◽  
Sylvie Migot ◽  
Christophe Candolfi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Melt Spun ◽  
Melt Spun Ribbons ◽  
Properties Characterization

scholarly journals Characterization of Organic Compound Doped Inorganic Ammonium Phosphate: Crystal Formation and Opto-Electrical Properties

2021 ◽  
Vol 2070 (1) ◽  
pp. 012004
Author(s):  
A. Jegatheesan ◽  
E. Rajasekaran
Keyword(s):  
Electrical Properties ◽  
Organic Compound ◽  
Inorganic Material ◽  
Ammonium Phosphate ◽  
Crystal Formation ◽  
Walk Away ◽  
Electronic Industry ◽  
Structural And Electrical Properties ◽  
The Subject

Abstract The opto-electrical properties of mixing organic compound with inorganic material is the subject matter of electronic industry. Nonlinear active single crystals of amino acid doped ammonium phosphate was characterised using various experimental techniques. Specifically alanine was doped with inorganic material and characterised in terms of carbon role in structure formation and related properties. The structural and electrical properties are studied by analysing absorption, transmission, hardness and conductivity of the doped one. The structure and electrical framework are well suited with expected values of pure inorganic one. Otherwise the organic one mixed with inorganic one does changes these properties remarkably which are essential for application in modern livelihood of human nature. The single crystal obtained from doping of organic one with the properties of inorganic material proves to be suitable for robo one to walk away with newer developments. It promises a newer way of developing crystals with good mechanical strength, flexible and all kinds of opto-electrical properties. Interestingly the modern electronic appliances will greatly benefit from this development of organic one to the inorganic one.

Structural and electrical properties characterization of (1–x)PbZr0.52Ti0.48O3–xBaFe0.5Nb0.5O3 system

2006 ◽  
Vol 83 (2) ◽  
pp. 295-299 ◽  
Author(s):  
S. Eitssayeam ◽  
U. Intatha ◽  
G. Rujijanagul ◽  
K. Pengpat ◽  
T. Tunkasiri
Keyword(s):  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Properties Characterization

Optical characterization of the electrical properties of processed GaAs

1993 ◽  
Vol 63 (1-4) ◽  
pp. 143-152 ◽  
Author(s):  
O.J. Glembocki ◽  
J.A. Dagata ◽  
E.S. Snow ◽  
D.S. Katzer
Keyword(s):  
Electrical Properties ◽  
Optical Characterization

Growth and Characterization of Epitaxial GaAs on Ge/Si Substrates

1983 ◽  
Vol 25 ◽  
Author(s):  
Robert M. Fletcher ◽  
D. Ken Wagner ◽  
Joseph M. Ballantyne
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Organometallic Vapor Phase Epitaxy ◽  
Si Substrate ◽  
Epitaxial Gaas ◽  
Si Substrates ◽  
Structural And Electrical Properties

ABSTRACTEpitaxial GaAs layers have been grown on Ge-coated Si substrates. Deposition of epitaxial Ge was performed by electron beam evaporation onto a <100> Si substrate. GaAs was then deposited by organometallic vapor-phase epitaxy. Films grown over large areas (∼1 cm2) and by selective epitaxy in stripe patterns (∼50 μm wide) have been evaluated by a number of techniques to determine structural and electrical properties. In addition, we report what we believe to be the first LEDs fabricated in GaAs/Ge/Si heterostructures.

Electrical and Optical Characterization of Mg Doping in GaN

2012 ◽  
Vol 620 ◽  
pp. 453-457
Author(s):  
E. Azimah ◽  
Norzaini Zainal ◽  
Hassan Zainuriah ◽  
Ahmad Shuhaimi ◽  
Azlan Bahrin
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Thermal Annealing ◽  
Optical Characterization ◽  
Contact Layer ◽  
Metal Contact ◽  
Mg Doping ◽  
Higher Temperature ◽  
Mg Doped

Apossible evidence of Mg related emission in Mg doped GaN material is observed inoptical measurement, even without thermal annealing. Meanwhile, the electrical properties of the sample improve when Ni/Au contact layer was annealed up to 400°C, but degrade at further temperature. We propose that such behavior isrelated to degradation of surface morphology of metal contact at higher temperature.

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