scholarly journals Modelling of voltage changes in the n-p junction in the pulse mode

2021 ◽  
Vol 2094 (2) ◽  
pp. 022020
Author(s):  
N M Bogatov ◽  
L R Grigoryan ◽  
A V Klenevsky ◽  
M S Kovalenko ◽  
V S Volodin
Keyword(s):  
Experimental Data ◽  
Space Charge Region ◽  
Fundamental System ◽  
Pulse Mode ◽  
Charge Carriers ◽  
System Of Differential Equations ◽  
Effective Lifetime ◽  
Voltage Change ◽  
Silicon Structures ◽  
Impulse Characteristics

Abstract The article presents the results of modeling the effect of the effective lifetime in the space charge region (SCR) of the n+-p junction on the impulse characteristics of silicon structures. The model is based on solving the fundamental system of differential equations for the transport of charge carriers in inhomogeneous semiconductors. The calculated time dependences of the voltage change in the SCR for a pulse voltage change on the n+-p-p+ structure correspond to the experimental data.

WEAKLY INTERACTING SYMMETRIC AND ANTI-SYMMETRIC STATES IN THE BILAYER SYSTEMS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1511-1518 ◽  
Author(s):  
M. MARCHEWKA ◽  
E. M. SHEREGII ◽  
I. TRALLE ◽  
G. TOMAKA ◽  
D. PLOCH
Keyword(s):  
Experimental Data ◽  
Wave Functions ◽  
Charge Carriers ◽  
Landau Levels ◽  
Quantum Beats ◽  
Weakly Interacting ◽  
Symmetric Wave ◽  
Sdh Oscillations ◽  
Magnetic Filed ◽  
Symmetric States

We have studied the parallel magneto-transport in DQW-structures of two different potential shapes: quasi-rectangular and quasi-triangular. The quantum beats effect was observed in Shubnikov-de Haas (SdH) oscillations for both types of the DQW structures in perpendicular magnetic filed arrangement. We developed a special scheme for the Landau levels energies calculation by means of which we carried out the necessary simulations of beating effect. In order to obtain the agreement between our experimental data and the results of simulations, we introduced two different quasi-Fermi levels which characterize symmetric and anti-symmetric states in DQWs. The existence of two different quasi Fermi-Levels simply means, that one can treat two sub-systems (charge carriers characterized by symmetric and anti-symmetric wave functions) as weakly interacting and having their own rate of establishing the equilibrium state.

Characterization of Bilayer Organic Solar Cells with Carbon Nanotubes Using Impedance Analysis

2020 ◽  
Vol 20 (11) ◽  
pp. 7100-7104
Author(s):  
Kyeongman Han ◽  
So-Yeon Jun ◽  
Hyuna Lim ◽  
Eunji Bae ◽  
Seung Hun Park ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Critical Concentration ◽  
Photovoltaic Performance ◽  
Impedance Analysis ◽  
Charge Carriers ◽  
Effective Lifetime ◽  
Key Factor

Four organic solar cell (OSC) devices with the bilayer heterojunction architecture were investigated, where carbon nanotubes (CNTs) were doped within the acceptor layer. The power conversion efficiency (PCE) of the CNT-incorporated device with a concentration of 0.004 wt% is approximately 20% point higher than that of the reference one. As the concentration of CNTs became higher, the PCE of the devices deteriorated; this could be caused by the percolative connection of CNTs within the layer. The voltage dependence on the effective lifetime of the charge carriers, determined by Cole–Cole curves of the impedance analysis, was different for the reference and CNT-incorporating devices—the lifetime of the CNT-incorporated ones was shorter, possibly owing to the high local electric field near the CNTs. Controlling the concentration of CNTs below the critical concentration of percolation is a key factor in achieving high photovoltaic performance.

Luminescence of quasi-2DEG in heterostructures based on PbS films

2001 ◽  
Vol 692 ◽  
Author(s):  
G. Khlyap
Keyword(s):  
Space Charge ◽  
Zinc Selenide ◽  
Space Charge Region ◽  
Lead Sulfide ◽  
Electron System ◽  
Charge Carriers ◽  
Band Diagram ◽  
Equilibrium Charge ◽  
Wide Gap ◽  
Non Equilibrium

AbstractThe paper deals with the problem of luminescence due to non-equilibrium charge carriers transfer between the quasi-2D electron system localized in the space-charge region of the heterostructures based on lead sulfide films (up to 3 μm thickness) and zinc selenide substrates surrounded by the wide gap semiconductor region. The processes of electro- and photoluminescence are studied, the band diagram is proposed and the main parameters of the structure PbS/quasi-2DEG/ZnSe are calculated.

scholarly journals Influence of low-energy proton irradiation on the effective lifetime in the space charge region of silicon n+-p junctions

2021 ◽  
Vol 2094 (2) ◽  
pp. 022006
Author(s):  
N M Bogatov ◽  
L R Grigoryan ◽  
M S Kovalenko ◽  
V S Volodin ◽  
M A Voloshin
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
High Speed ◽  
Proton Irradiation ◽  
Modulation Frequency ◽  
Low Energy ◽  
Effective Lifetime ◽  
Energy Proton ◽  
Pulse Characteristics

Abstract The effect of low-energy proton irradiation on the pulse characteristics of silicon n+-p-p+ structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 1015 cm−2 creates a region with an effective lifetime of 5.5·10−8 s in the space charge region of the n+-p junction. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.

scholarly journals Effet of edge fluorination and chlorination on structures, stability, electronic and charge transport properties of benzo[o]bistriphenyleno[2,1,12,11-efghi:2',1',12',11'-uvabc]ovalene molecule : DFT study.

2021 ◽  
Author(s):  
Marius Ousmanou Bouba ◽  
Fridolin Tchangnwa Nya ◽  
Christine Yvette Ngui ◽  
Jean Marie Ndjaka
Keyword(s):  
Experimental Data ◽  
Density Functional ◽  
Charge Carriers ◽  
Bandgap Energy ◽  
Electron Affinities ◽  
New Materials ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Theoretical Investigations ◽  
Good Agreement

Abstract We have investigated the structures, electronic properties, hole and electron mobilities of fluorinated and chlorinated nanographene of benzo[o]bistriphenyleno[2,1,12,11-efghi:2',1',12',11'-uvabc]ovalene (TCHG) molecules, us- ing the density functional theory (DFT) and Markus-Hush charge transfer theory. The calculated geometric parameters and the IR spectrum for chlorinated TCHG are in good agreement with the experimental data. Our theoretical investigations have shown that fluorination and chlorination significantly reduce the bandgap energy of TCHG. The obtained adiabatic electron affinities (AEAs) values are 2.76 and 2.93 eV respectively, indicating the air-stable materials. The calculation of charge carriers mobilities in chlorinated dimer shows that the mobility of the electrons is ten times that of the holes, suggesting an n-type behavior. We have shown that the fluorination and chlorination of TCHG are promising pathways for the design of new materials useful in optoelectronics

scholarly journals Classical Size Effects in Films of n-PbTe

2015 ◽  
Vol 16 (4) ◽  
pp. 661-666
Author(s):  
M.A. Ruvinskii ◽  
B.S. Dzundza ◽  
O.B. Kostyuk
Keyword(s):  
Experimental Data ◽  
Boltzmann Equation ◽  
Seebeck Coefficient ◽  
Cross Section ◽  
Size Effects ◽  
Theoretical Calculations ◽  
Rectangular Cross Section ◽  
Charge Carriers ◽  
Kinetic Boltzmann Equation ◽  
Classical Size

Based on kinetic Boltzmann equation the boundary problem of calculating the conductivity and Seebeck coefficient for a film with a rectangular cross section is solved. Mirror- diffuse mechanism of reflection of the charge carriers from the surfaces of the film is considered. Calculations were performed for different thicknesses nondegenerate semiconductor n-PbTe. A comparison of theoretical calculations with obtained experimental data for vapor-phase condensates based on PbTe is made.

scholarly journals Влияние барьерных контактов на транспорт носителей заряда в однородных структурах из GaAs, легированных глубокими центрами Cr и EL2

2021 ◽  
Vol 55 (8) ◽  
pp. 693
Author(s):  
М.Г. Верхолетов ◽  
И.А. Прудаев
Keyword(s):  
Ionizing Radiation ◽  
Field Strength ◽  
Differential Equations ◽  
Electric Field ◽  
Electric Field Strength ◽  
Barrier Layer ◽  
Charge Carriers ◽  
System Of Differential Equations ◽  
Deep Donor ◽  
P Type

The results of studying the transport of charge carriers in GaAs structures doped with deep donor EL2 centers and acceptor levels of Cr for detectors of ionizing radiation and ultrafast photoelectric switches are presented. Three configurations of structures are investigated: p-i-n, n-i-n and p-i-p- types. The system of differential equations for the temperature of charge carriers, Poisson's equations and continuity was solved using a commercial software. It was found that the choice of the type of the barrier layer makes it possible to control the uniformity of the electric field strength in the structures. It is shown that p-i-p- type structures have the best uniformity of the electric field strength.

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