Wafer fusion technique features for near-IR laser sources
2021 ◽
Vol 2103
(1)
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pp. 012107
Abstract The paper presents the results of studies of the conditions for the formation of A3B5 compound semiconductors heterointerfaces including InP, InGaAsP and GaAs layers. The heterostructures were grown by molecular-beam epitaxy and were fused by wafer fusion technique. Improvement of planarity and homogeneity over the thickness of heterointerface due to using optimized preliminary preparation of semiconductor wafer surfaces was demonstrated. No additional extended defects such as dislocations were found.
2020 ◽
Vol 1697
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pp. 012178
2004 ◽
Vol 75
(10)
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pp. 3342-3344
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2018 ◽
Vol 54
(4)
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pp. 461-471
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2015 ◽
Vol 119
(6)
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pp. 1037-1047
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