Specific features of the formation of optical waveguides, contact pads and electrical interconnections on lithium tantalate substrates

Abstract The article considers the formation of titanium channel optical waveguides in LiTaO3 substrates. These structures were obtained by dry etching of grooves in SF6 plasma and magnetron sputtering of titanium film. After that, waveguides were formed by plasma etching using photoresist as mask. Technological features and modes of microstructure production are described. Al contact pads were produced by magnetron sputtering thin metal films on LiTaO3. Aluminum wires were ultrasonically bonded to Al contact pads using Delvotec 5630. The developed technology of formation of contact pads and bonding modes made it possible to obtain a bonded joint with a bond strength of 23-25 Gs.

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Sputtering synthesis and optical investigation of octadecanethiol-protected fluorescent Au nanoparticles

New Journal of Chemistry ◽

10.1039/c5nj01011j ◽

2015 ◽

Vol 39 (8) ◽

pp. 5895-5897 ◽

Cited By ~ 17

Author(s):

Yohei Ishida ◽

Taiki Sumi ◽

Tetsu Yonezawa

Keyword(s):

Magnetron Sputtering ◽

Au Nanoparticles ◽

Metal Films ◽

Thin Metal ◽

Fluorescent Nanoparticles ◽

Optical Investigation ◽

Thin Metal Films

Magnetron sputtering produces not only thin metal films but also fluorescent nanoparticles.

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Modeling evaporation, ion-beam assist, and magnetron sputtering of thin metal films over realistic time scales

Physical Review B ◽

10.1103/physrevb.86.035416 ◽

2012 ◽

Vol 86 (3) ◽

Cited By ~ 17

Author(s):

S. Blackwell ◽

R. Smith ◽

S. D. Kenny ◽

J. M. Walls

Keyword(s):

Magnetron Sputtering ◽

Time Scales ◽

Ion Beam ◽

Metal Films ◽

Thin Metal ◽

Thin Metal Films

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Obtaining thin metal films and their compounds using magnetron sputtering and arc evaporation in a single technological cycle

Journal of Physics Conference Series ◽

10.1088/1742-6596/2059/1/012022 ◽

2021 ◽

Vol 2059 (1) ◽

pp. 012022

Author(s):

D E Shashin ◽

N I Sushentsov

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

High Performance ◽

Metal Films ◽

Thin Metal ◽

Performance Characteristics ◽

Processing Unit ◽

Thin Metal Films ◽

Technological Cycle ◽

Arc Evaporation

Abstract The authors of the article consider the possibility of obtaining thin films using magnetron sputtering and arc evaporation. The prospects of combining these methods in a single processing unit for obtaining films with high performance characteristics have been shown.

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The effects of substrate plasma etching on the performance of thin metal films

Thin Solid Films ◽

10.1016/j.tsf.2017.02.023 ◽

2017 ◽

Vol 626 ◽

pp. 200-208 ◽

Cited By ~ 4

Author(s):

Victor P. Siller ◽

Keller Andrews ◽

Anthony B. Kaye

Keyword(s):

Plasma Etching ◽

Metal Films ◽

Thin Metal ◽

Thin Metal Films

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Metal Microstructures in Advanced CMOS Devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100164258 ◽

1996 ◽

Vol 54 ◽

pp. 358-359

Author(s):

L. M. Gignac ◽

K. P. Rodbell

Keyword(s):

Grain Boundaries ◽

Semiconductor Device ◽

Chemical Vapor ◽

Microstructural Characterization ◽

Metal Films ◽

Thin Metal ◽

Electrical Performance ◽

Thin Metal Films ◽

Chemical Vapor Deposited ◽

Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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